@inproceedings{bf7baebc12f447c4a97e09a72fd5eb80,
title = "Noise properties of a single ZnO nanowire device",
abstract = "The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52×10 -3. In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proportional to the square of ZnO NW resistance. If a sample shows a nonlinear current-voltage (I-V) characteristic due to a poor electrical contact, the noise power spectrum is proportional to the third power of current instead of the square of current.",
author = "Choi, {Soo Han} and Kim, {Dong Wook} and Jang, {Do Young} and Ji, {Hyun Jin} and Kim, {Sang Woo} and Park, {So Jung} and Moon, {Seung Eon} and Kim, {Gyu Tae}",
year = "2008",
language = "English",
isbn = "9781605609720",
series = "Materials Research Society Symposium Proceedings",
pages = "26--32",
booktitle = "Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications",
note = "Semiconductor Nanowires-Growth, Physics, Devices and Applications ; Conference date: 24-03-2008 Through 28-03-2008",
}