Non-volatile control of 2DEG conductivity at oxide interfaces

Shin Ik Kim; Dai Hong Kim; Yoonjung Kim; Seon Young Moon; Min Gyu Kang; Jong Kwon Choi; Ho Won Jang; Seong Keun Kim; Ji Won Choi; Seok Jin Yoon; Hye Jung Chang; Chong Yun Kang; Suyoun Lee; Seong Hyeon Hong; Jin Sang Kim; Seung Hyub Baek

doi:10.1002/adma.201301097

Non-volatile control of 2DEG conductivity at oxide interfaces

Shin Ik Kim, Dai Hong Kim, Yoonjung Kim, Seon Young Moon, Min Gyu Kang, Jong Kwon Choi, Ho Won Jang, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Hye Jung Chang, Chong Yun Kang, Suyoun Lee, Seong Hyeon Hong, Jin Sang Kim, Seung Hyub Baek

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr_0.2Ti _0.8)O₃ overlayer on 2DEG (LaAlO₃/SrTiO ₃), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

Original language	English
Pages (from-to)	4612-4617
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	33
DOIs	https://doi.org/10.1002/adma.201301097
Publication status	Published - 2013 Sept 6

Keywords

epitaxial oxide thin films
ferroelectric
multifunctional oxide
two-dimentional electron gas

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201301097

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title = "Non-volatile control of 2DEG conductivity at oxide interfaces",

abstract = "The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.",

keywords = "epitaxial oxide thin films, ferroelectric, multifunctional oxide, two-dimentional electron gas",

author = "Kim, {Shin Ik} and Kim, {Dai Hong} and Yoonjung Kim and Moon, {Seon Young} and Kang, {Min Gyu} and Choi, {Jong Kwon} and Jang, {Ho Won} and Kim, {Seong Keun} and Choi, {Ji Won} and Yoon, {Seok Jin} and Chang, {Hye Jung} and Kang, {Chong Yun} and Suyoun Lee and Hong, {Seong Hyeon} and Kim, {Jin Sang} and Baek, {Seung Hyub}",

year = "2013",

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day = "6",

doi = "10.1002/adma.201301097",

language = "English",

volume = "25",

pages = "4612--4617",

journal = "Advanced Materials",

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TY - JOUR

T1 - Non-volatile control of 2DEG conductivity at oxide interfaces

AU - Kim, Shin Ik

AU - Kim, Dai Hong

AU - Kim, Yoonjung

AU - Moon, Seon Young

AU - Kang, Min Gyu

AU - Choi, Jong Kwon

AU - Jang, Ho Won

AU - Kim, Seong Keun

AU - Choi, Ji Won

AU - Yoon, Seok Jin

AU - Chang, Hye Jung

AU - Kang, Chong Yun

AU - Lee, Suyoun

AU - Hong, Seong Hyeon

AU - Kim, Jin Sang

AU - Baek, Seung Hyub

PY - 2013/9/6

Y1 - 2013/9/6

N2 - The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

AB - The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

KW - epitaxial oxide thin films

KW - ferroelectric

KW - multifunctional oxide

KW - two-dimentional electron gas

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DO - 10.1002/adma.201301097

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SN - 0935-9648

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SP - 4612

EP - 4617

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Non-volatile control of 2DEG conductivity at oxide interfaces

Abstract

Keywords

ASJC Scopus subject areas

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