Non-volatile control of 2DEG conductivity at oxide interfaces

  • Shin Ik Kim
  • , Dai Hong Kim
  • , Yoonjung Kim
  • , Seon Young Moon
  • , Min Gyu Kang
  • , Jong Kwon Choi
  • , Ho Won Jang
  • , Seong Keun Kim
  • , Ji Won Choi
  • , Seok Jin Yoon
  • , Hye Jung Chang
  • , Chong-Yun Kang
  • , Suyoun Lee
  • , Seong Hyeon Hong
  • , Jin Sang Kim*
  • , Seung Hyub Baek
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)

    Abstract

    The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

    Original languageEnglish
    Pages (from-to)4612-4617
    Number of pages6
    JournalAdvanced Materials
    Volume25
    Issue number33
    DOIs
    Publication statusPublished - 2013 Sept 6

    Keywords

    • epitaxial oxide thin films
    • ferroelectric
    • multifunctional oxide
    • two-dimentional electron gas

    ASJC Scopus subject areas

    • General Materials Science
    • Mechanics of Materials
    • Mechanical Engineering

    Fingerprint

    Dive into the research topics of 'Non-volatile control of 2DEG conductivity at oxide interfaces'. Together they form a unique fingerprint.

    Cite this