Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)

Dong Ho Kang; Seong Taek Hong; Aely Oh; Seung Hwan Kim; Hyun Yong Yu; Jin Hong Park

doi:10.1016/j.materresbull.2016.02.029

Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS₂) by zinc oxide (ZnO)

Dong Ho Kang, Seong Taek Hong, Aely Oh, Seung Hwan Kim, Hyun Yong Yu, Jin Hong Park

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS₂ by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (I_D–V_G with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS₂-based electronics (I_on↑, μ_FE↑, n↑) owing to reduction of the effective barrier height between the source and the MoS₂ channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔV_TH of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS₂ photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 10³ A/W) and detectivity (5.94 × 10¹² Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.

Original language	English
Pages (from-to)	26-30
Number of pages	5
Journal	Materials Research Bulletin
Volume	82
DOIs	https://doi.org/10.1016/j.materresbull.2016.02.029
Publication status	Published - 2016 Oct 1

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd

Keywords

A. Electronic materials
A. Layered compounds
A. Semiconductor
D. Electrical properties
D. Electronic structure

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2016.02.029

Cite this

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title = "Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)",

abstract = "In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (ID–VG with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS2-based electronics (Ion↑, μFE↑, n↑) owing to reduction of the effective barrier height between the source and the MoS2 channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔVTH of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS2 photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 103 A/W) and detectivity (5.94 × 1012 Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.",

keywords = "A. Electronic materials, A. Layered compounds, A. Semiconductor, D. Electrical properties, D. Electronic structure",

author = "Kang, {Dong Ho} and Hong, {Seong Taek} and Aely Oh and Kim, {Seung Hwan} and Yu, {Hyun Yong} and Park, {Jin Hong}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

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doi = "10.1016/j.materresbull.2016.02.029",

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AU - Kang, Dong Ho

AU - Hong, Seong Taek

AU - Oh, Aely

AU - Kim, Seung Hwan

AU - Yu, Hyun Yong

AU - Park, Jin Hong

PY - 2016/10/1

Y1 - 2016/10/1

N2 - In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (ID–VG with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS2-based electronics (Ion↑, μFE↑, n↑) owing to reduction of the effective barrier height between the source and the MoS2 channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔVTH of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS2 photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 103 A/W) and detectivity (5.94 × 1012 Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.

AB - In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (ID–VG with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS2-based electronics (Ion↑, μFE↑, n↑) owing to reduction of the effective barrier height between the source and the MoS2 channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔVTH of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS2 photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 103 A/W) and detectivity (5.94 × 1012 Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.

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