Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

Tae Guen Kim; Chang Sik Son; Noriaki Tsurumachi; Dae Kon Oh; Mutsuo Ogura

doi:10.1088/0957-4484/16/8/044

Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

Tae Guen Kim, Chang Sik Son, Noriaki Tsurumachi, Dae Kon Oh, Mutsuo Ogura

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove In _0.2Ga_0.8As/Al_0.2Ga_0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al _0.2Ga_0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.

Original language	English
Pages (from-to)	1245-1248
Number of pages	4
Journal	Nanotechnology
Volume	16
Issue number	8
DOIs	https://doi.org/10.1088/0957-4484/16/8/044
Publication status	Published - 2005 Aug 1

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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Cite this

@article{af81d1b7508d43f6b45fc75b54be5523,

title = "Nonlinear emission from an InGaAs/AlGaAs quantum-wire array",

abstract = "Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove In 0.2Ga0.8As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al 0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.",

author = "Kim, {Tae Guen} and Son, {Chang Sik} and Noriaki Tsurumachi and Oh, {Dae Kon} and Mutsuo Ogura",

year = "2005",

month = aug,

day = "1",

doi = "10.1088/0957-4484/16/8/044",

language = "English",

volume = "16",

pages = "1245--1248",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

AU - Kim, Tae Guen

AU - Son, Chang Sik

AU - Tsurumachi, Noriaki

AU - Oh, Dae Kon

AU - Ogura, Mutsuo

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove In 0.2Ga0.8As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al 0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.

AB - Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove In 0.2Ga0.8As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al 0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.

UR - http://www.scopus.com/inward/record.url?scp=21144451432&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/16/8/044

DO - 10.1088/0957-4484/16/8/044

M3 - Article

AN - SCOPUS:21144451432

SN - 0957-4484

VL - 16

SP - 1245

EP - 1248

JO - Nanotechnology

JF - Nanotechnology

IS - 8

ER -

Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

Abstract

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