Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

Kwang Hyeon Baik; Hyonwoong Kim; Jihyun Kim; Sukkoo Jung; Soohwan Jang

doi:10.1063/1.4819847

Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

Kwang Hyeon Baik, Hyonwoong Kim, Jihyun Kim, Sukkoo Jung, Soohwan Jang

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2 ̄ 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.

Original language	English
Article number	091107
Journal	Applied Physics Letters
Volume	103
Issue number	9
DOIs	https://doi.org/10.1063/1.4819847
Publication status	Published - 2013 Aug 26

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN",

abstract = "Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2{\= } 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.",

author = "Baik, {Kwang Hyeon} and Hyonwoong Kim and Jihyun Kim and Sukkoo Jung and Soohwan Jang",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012R1A1B4002649).",

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doi = "10.1063/1.4819847",

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AU - Baik, Kwang Hyeon

AU - Kim, Hyonwoong

AU - Kim, Jihyun

AU - Jung, Sukkoo

AU - Jang, Soohwan

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012R1A1B4002649).

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Y1 - 2013/8/26

N2 - Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2 ̄ 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.

AB - Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2 ̄ 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.

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Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

Abstract

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