Abstract
Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2 ̄ 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.
Original language | English |
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Article number | 091107 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2013 Aug 26 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)