Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer

Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.

Original languageEnglish
Article number8756223
Pages (from-to)3342-3348
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2019 Aug

Bibliographical note

Funding Information:
Manuscript received February 22, 2019; accepted June 18, 2019. Date of publication July 8, 2019; date of current version July 23, 2019. This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry and Energy (MOTIE), South Korea, through the Industrial Strategic Technology Development Program (Development of Fabrication and Device Structure of Feedback Si Channel 1T-SRAM for Artificial Intelligence) under Grant 10067791, and in part by the Brain Korea 21 Plus Project in 2018. The review of this paper was arranged by Editor U. E. Avci. (Corresponding author: Sangsig Kim.) H. Kang, Y. Kim, D. Lim, S. Woo, and K. Cho are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea.

Publisher Copyright:
© 1963-2012 IEEE.


  • Feedback field-effect transistor (FBFET)
  • integration
  • nonvolatile memory
  • positive feedback loop
  • volatile memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer'. Together they form a unique fingerprint.

Cite this