Abstract
We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.
Original language | English |
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Article number | 8756223 |
Pages (from-to) | 3342-3348 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 66 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2019 Aug |
Bibliographical note
Funding Information:Manuscript received February 22, 2019; accepted June 18, 2019. Date of publication July 8, 2019; date of current version July 23, 2019. This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry and Energy (MOTIE), South Korea, through the Industrial Strategic Technology Development Program (Development of Fabrication and Device Structure of Feedback Si Channel 1T-SRAM for Artificial Intelligence) under Grant 10067791, and in part by the Brain Korea 21 Plus Project in 2018. The review of this paper was arranged by Editor U. E. Avci. (Corresponding author: Sangsig Kim.) H. Kang, Y. Kim, D. Lim, S. Woo, and K. Cho are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea.
Publisher Copyright:
© 1963-2012 IEEE.
Keywords
- Feedback field-effect transistor (FBFET)
- integration
- nonvolatile memory
- positive feedback loop
- volatile memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering