Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer

Hyungu Kang; Jinsun Cho; Yoonjoong Kim; Doohyeok Lim; Sola Woo; Kyoungah Cho; Sangsig Kim

doi:10.1109/TED.2019.2924961

Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer

Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.

Original language	English
Article number	8756223
Pages (from-to)	3342-3348
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	8
DOIs	https://doi.org/10.1109/TED.2019.2924961
Publication status	Published - 2019 Aug

Bibliographical note

Funding Information:
Manuscript received February 22, 2019; accepted June 18, 2019. Date of publication July 8, 2019; date of current version July 23, 2019. This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry and Energy (MOTIE), South Korea, through the Industrial Strategic Technology Development Program (Development of Fabrication and Device Structure of Feedback Si Channel 1T-SRAM for Artificial Intelligence) under Grant 10067791, and in part by the Brain Korea 21 Plus Project in 2018. The review of this paper was arranged by Editor U. E. Avci. (Corresponding author: Sangsig Kim.) H. Kang, Y. Kim, D. Lim, S. Woo, and K. Cho are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea.

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Feedback field-effect transistor (FBFET)
integration
nonvolatile memory
positive feedback loop
volatile memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2019.2924961

Cite this

@article{60a801a5faf9409482f183c8626fecd2,

title = "Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer",

abstract = "We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.",

keywords = "Feedback field-effect transistor (FBFET), integration, nonvolatile memory, positive feedback loop, volatile memory",

author = "Hyungu Kang and Jinsun Cho and Yoonjoong Kim and Doohyeok Lim and Sola Woo and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: Manuscript received February 22, 2019; accepted June 18, 2019. Date of publication July 8, 2019; date of current version July 23, 2019. This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry and Energy (MOTIE), South Korea, through the Industrial Strategic Technology Development Program (Development of Fabrication and Device Structure of Feedback Si Channel 1T-SRAM for Artificial Intelligence) under Grant 10067791, and in part by the Brain Korea 21 Plus Project in 2018. The review of this paper was arranged by Editor U. E. Avci. (Corresponding author: Sangsig Kim.) H. Kang, Y. Kim, D. Lim, S. Woo, and K. Cho are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = aug,

doi = "10.1109/TED.2019.2924961",

language = "English",

volume = "66",

pages = "3342--3348",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer

AU - Kang, Hyungu

AU - Cho, Jinsun

AU - Kim, Yoonjoong

AU - Lim, Doohyeok

AU - Woo, Sola

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: Manuscript received February 22, 2019; accepted June 18, 2019. Date of publication July 8, 2019; date of current version July 23, 2019. This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry and Energy (MOTIE), South Korea, through the Industrial Strategic Technology Development Program (Development of Fabrication and Device Structure of Feedback Si Channel 1T-SRAM for Artificial Intelligence) under Grant 10067791, and in part by the Brain Korea 21 Plus Project in 2018. The review of this paper was arranged by Editor U. E. Avci. (Corresponding author: Sangsig Kim.) H. Kang, Y. Kim, D. Lim, S. Woo, and K. Cho are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: © 1963-2012 IEEE.

PY - 2019/8

Y1 - 2019/8

N2 - We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.

AB - We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.

KW - Feedback field-effect transistor (FBFET)

KW - integration

KW - nonvolatile memory

KW - positive feedback loop

KW - volatile memory

UR - http://www.scopus.com/inward/record.url?scp=85069944533&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2924961

DO - 10.1109/TED.2019.2924961

M3 - Article

AN - SCOPUS:85069944533

SN - 0018-9383

VL - 66

SP - 3342

EP - 3348

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 8756223

ER -

Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this