Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure

S. M. Koo; M. S. Lee; B. M. Moon

doi:10.1049/el:20045245

Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O ₃/BaRuO₃ structure

S. M. Koo, M. S. Lee, B. M. Moon

Research output: Contribution to journal › Article › peer-review

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Abstract

A nonvolatile current sensing device using Pb(Zr_0.52,Ti _0.48)O₃ (PZT) as a gate and BaRuO₃ (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

Original language	English
Pages (from-to)	1088-1089
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	17
DOIs	https://doi.org/10.1049/el:20045245
Publication status	Published - 2004 Aug 19

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Electrical and Electronic Engineering

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10.1049/el:20045245

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title = "Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure",

abstract = "A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.",

author = "Koo, {S. M.} and Lee, {M. S.} and Moon, {B. M.}",

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AU - Koo, S. M.

AU - Lee, M. S.

AU - Moon, B. M.

PY - 2004/8/19

Y1 - 2004/8/19

N2 - A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

AB - A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O ₃/BaRuO₃ structure

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