Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure

S. M. Koo; M. S. Lee; B. M. Moon

doi:10.1049/el:20045245

Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O ₃/BaRuO₃ structure

S. M. Koo^*
, M. S. Lee
, B. M. Moon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A nonvolatile current sensing device using Pb(Zr_0.52,Ti _0.48)O₃ (PZT) as a gate and BaRuO₃ (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

Original language	English
Pages (from-to)	1088-1089
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	17
DOIs	https://doi.org/10.1049/el:20045245
Publication status	Published - 2004 Aug 19

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20045245

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@article{7d4e4a5bd5224effbdb4c8b2d55449c1,

title = "Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure",

abstract = "A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33\% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.",

author = "Koo, \{S. M.\} and Lee, \{M. S.\} and Moon, \{B. M.\}",

year = "2004",

month = aug,

day = "19",

doi = "10.1049/el:20045245",

language = "English",

volume = "40",

pages = "1088--1089",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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T1 - Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure

AU - Koo, S. M.

AU - Lee, M. S.

AU - Moon, B. M.

PY - 2004/8/19

Y1 - 2004/8/19

N2 - A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

AB - A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

UR - https://www.scopus.com/pages/publications/4444334348

UR - https://www.scopus.com/pages/publications/4444334348#tab=citedBy

U2 - 10.1049/el:20045245

DO - 10.1049/el:20045245

M3 - Article

AN - SCOPUS:4444334348

SN - 0013-5194

VL - 40

SP - 1088

EP - 1089

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O ₃/BaRuO₃ structure

Abstract

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