Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

Hyunhee Baek; Chanwoo Lee; Jungkyu Choi; Jinhan Cho

doi:10.1021/la303857b

Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

Hyunhee Baek, Chanwoo Lee, Jungkyu Choi, Jinhan Cho

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb₂O₅) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb₂O₅, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 C to form a Nb₂O₅ film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb₂O₅ films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V_RESET and 1.03 ± 0.06 V_SET) with a high ON/OFF current ratio above 10⁸. The reported approach offers opportunities for preparing Nb₂O₅-based resistive switching memory devices from solution process.

Original language	English
Pages (from-to)	380-386
Number of pages	7
Journal	Langmuir
Volume	29
Issue number	1
DOIs	https://doi.org/10.1021/la303857b
Publication status	Published - 2013 Jan 8

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

Access to Document

10.1021/la303857b

Cite this

@article{7893d91e448c42f2874b8eec44cd8e4e,

title = "Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films",

abstract = "We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb2O5) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb2O5, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 C to form a Nb2O5 film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb2O5 films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as {"}electroforming{"}, a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 VRESET and 1.03 ± 0.06 VSET) with a high ON/OFF current ratio above 108. The reported approach offers opportunities for preparing Nb2O5-based resistive switching memory devices from solution process.",

author = "Hyunhee Baek and Chanwoo Lee and Jungkyu Choi and Jinhan Cho",

year = "2013",

month = jan,

day = "8",

doi = "10.1021/la303857b",

language = "English",

volume = "29",

pages = "380--386",

journal = "Langmuir",

issn = "0743-7463",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

AU - Baek, Hyunhee

AU - Lee, Chanwoo

AU - Choi, Jungkyu

AU - Cho, Jinhan

PY - 2013/1/8

Y1 - 2013/1/8

N2 - We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb2O5) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb2O5, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 C to form a Nb2O5 film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb2O5 films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 VRESET and 1.03 ± 0.06 VSET) with a high ON/OFF current ratio above 108. The reported approach offers opportunities for preparing Nb2O5-based resistive switching memory devices from solution process.

AB - We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb2O5) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb2O5, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 C to form a Nb2O5 film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb2O5 films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 VRESET and 1.03 ± 0.06 VSET) with a high ON/OFF current ratio above 108. The reported approach offers opportunities for preparing Nb2O5-based resistive switching memory devices from solution process.

UR - http://www.scopus.com/inward/record.url?scp=84872120248&partnerID=8YFLogxK

U2 - 10.1021/la303857b

DO - 10.1021/la303857b

M3 - Article

C2 - 23210494

AN - SCOPUS:84872120248

SN - 0743-7463

VL - 29

SP - 380

EP - 386

JO - Langmuir

JF - Langmuir

IS - 1

ER -

Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this