Nonvolatile resistance switching on two-dimensional electron gas

Jin Gwan Joung; Shin Ik Kim; Seon Young Moon; Dai Hong Kim; Hyo Jin Gwon; Seong Hyeon Hong; Hye Jung Chang; Jin Ha Hwang; Beom Jin Kwon; Seong Keun Kim; Ji Won Choi; Seok Jin Yoon; Chong-Yun Kang; Kwang Soo Yoo; Jin Sang Kim; Seung Hyub Baek

doi:10.1021/am504354c

Nonvolatile resistance switching on two-dimensional electron gas

Jin Gwan Joung, Shin Ik Kim, Seon Young Moon, Dai Hong Kim, Hyo Jin Gwon, Seong Hyeon Hong, Hye Jung Chang, Jin Ha Hwang, Beom Jin Kwon, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Chong-Yun Kang, Kwang Soo Yoo, Jin Sang Kim, Seung Hyub Baek^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta₂O_5-y/Ta₂O_5-x/SrTiO₃ heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>10⁶) and a low leakage current at the OFF state (∼10^-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

Original language	English
Pages (from-to)	17785-17791
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	20
DOIs	https://doi.org/10.1021/am504354c
Publication status	Published - 2014 Oct 22

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.

Keywords

complex oxide
heterointerface
nonvolatile memory
resistance switching
two-dimensional electron gas

ASJC Scopus subject areas

General Materials Science

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10.1021/am504354c

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Joung, J. G., Kim, S. I., Moon, S. Y., Kim, D. H., Gwon, H. J., Hong, S. H., Chang, H. J., Hwang, J. H., Kwon, B. J., Kim, S. K., Choi, J. W., Yoon, S. J., Kang, C.-Y., Yoo, K. S., Kim, J. S., & Baek, S. H. (2014). Nonvolatile resistance switching on two-dimensional electron gas. ACS Applied Materials and Interfaces, 6(20), 17785-17791. https://doi.org/10.1021/am504354c

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title = "Nonvolatile resistance switching on two-dimensional electron gas",

abstract = "Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.",

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doi = "10.1021/am504354c",

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AU - Joung, Jin Gwan

AU - Kim, Shin Ik

AU - Moon, Seon Young

AU - Kim, Dai Hong

AU - Gwon, Hyo Jin

AU - Hong, Seong Hyeon

AU - Chang, Hye Jung

AU - Hwang, Jin Ha

AU - Kwon, Beom Jin

AU - Kim, Seong Keun

AU - Choi, Ji Won

AU - Yoon, Seok Jin

AU - Kang, Chong-Yun

AU - Yoo, Kwang Soo

AU - Kim, Jin Sang

AU - Baek, Seung Hyub

PY - 2014/10/22

Y1 - 2014/10/22

N2 - Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

AB - Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

KW - complex oxide

KW - heterointerface

KW - nonvolatile memory

KW - resistance switching

KW - two-dimensional electron gas

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SN - 1944-8244

VL - 6

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EP - 17791

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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ER -

Nonvolatile resistance switching on two-dimensional electron gas

Abstract

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Keywords

ASJC Scopus subject areas

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