Normally off WSe₂Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping

Keyphrases

• Ambipolar 66%
• Ambipolar Semiconductors 66%
• Ar Ions 33%
• Carrier Mobility 33%
• Contact Doping 100%
• Device Architecture 33%
• Electrical Characteristics 33%
• Elevated Temperature 33%
• Enhancement-mode (E-mode) 33%
• Field Effect 33%
• Field-effect Transistors 100%
• Gate Bias 33%
• High On-off Ratio 66%
• High Work Function 33%
• Hole Concentration 33%
• Ion Therapy 33%
• Junction Barrier 33%
• Lateral Heterojunction 33%
• Mapping Analysis 33%
• Mode Field 33%
• N-doping 33%
• Nanosheets 33%
• Nanostructures 33%
• Next-generation Devices 33%
• Normally-off 66%
• Off-state 33%
• On-state Current 33%
• Operating Temperature 33%
• P-n Heterojunction 33%
• Photocurrent Mapping 33%
• Polystyrene Nanoplastics (PS-NPs) 33%
• Range Bias 33%
• Range Gating 33%
• Se Vacancy 33%
• Self-aligned 33%
• Self-aligned Contacts 100%
• Thermal Stability 33%
• UV-ozone 33%
• WS2 Nanosheets 100%

Engineering

• Carrier Mobility 33%
• Elevated Temperature 33%
• Field-Effect Transistor 100%
• Gate Bias 33%
• Generation Device 33%
• Hole Concentration 33%
• Homojunction 66%
• Mode Field 33%
• Nanosheet 33%
• Operating Temperature 33%
• Photocurrent 33%
• Pivotal Role 33%
• Range Gate 33%

Material Science

• Carrier Mobility 33%
• Electrical Property 33%
• Field Effect Transistor 100%
• Hole Concentration 33%
• Nanosheet 33%
• Thermal Stability 33%