Abstract
Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.
Original language | English |
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Article number | 265202 |
Journal | Nanotechnology |
Volume | 19 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2008 Jul 2 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering