NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers

Donghyuk Yeom, Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Changjoon Yoon, Dongseung Kim, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    32 Citations (Scopus)

    Abstract

    Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

    Original languageEnglish
    Article number265202
    JournalNanotechnology
    Volume19
    Issue number26
    DOIs
    Publication statusPublished - 2008 Jul 2

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • General Materials Science
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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