NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers

Donghyuk Yeom; Kihyun Keem; Jeongmin Kang; Dong Young Jeong; Changjoon Yoon; Dongseung Kim; Sangsig Kim

doi:10.1088/0957-4484/19/26/265202

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al₂O₃ gate layers

Donghyuk Yeom, Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Changjoon Yoon, Dongseung Kim, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al ₂O₃ gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I_on/I_off ratios were as high as ∼10⁸ were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

Original language	English
Article number	265202
Journal	Nanotechnology
Volume	19
Issue number	26
DOIs	https://doi.org/10.1088/0957-4484/19/26/265202
Publication status	Published - 2008 Jul 2

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.",

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AU - Yeom, Donghyuk

AU - Keem, Kihyun

AU - Kang, Jeongmin

AU - Jeong, Dong Young

AU - Yoon, Changjoon

AU - Kim, Dongseung

AU - Kim, Sangsig

PY - 2008/7/2

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N2 - Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

AB - Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

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NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al₂O₃ gate layers

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