TY - GEN
T1 - Novel 1-chip FBAR filter for wireless handsets
AU - Ha, Byeoungju
AU - Song, Insang
AU - Park, Yunkwon
AU - Kim, Duckhwan
AU - Kim, Woonbae
AU - Nam, Kuangwoo
AU - Pak, James Jungho
PY - 2005
Y1 - 2005
N2 - Thin film bulk acoustic resonators, or FBARs, are surely a technical breakthrough for the miniaturization of RF filters and for the integration with other RF components. However, there are few problems of limitation in the size reduction and the difficulties in monolithic integration, because FBARs and auxiliary circuits are still manufactured separately and assembled using wire bonding process. Therefore, we establish for the first time a novel monolithic 1-chip transmit (Tx) filter that can be achieved with a minimum size of 1 mm × 1 mm x 0.8 mm using a suspended membrane FBAR, a integrated inductor, and wafer level packaging for 1900 MHz PCS handsets. The 1-chip filter has an insertion loss less than 2.86 dB in the pass band (1850 - 1910MHz) of US PCS Handsets. Attenuation characteristics is measured to show excellent performance at over 35 dB in Rx band (1930 - 1990 MHz) and over 25 dB in the below 1800MHz range
AB - Thin film bulk acoustic resonators, or FBARs, are surely a technical breakthrough for the miniaturization of RF filters and for the integration with other RF components. However, there are few problems of limitation in the size reduction and the difficulties in monolithic integration, because FBARs and auxiliary circuits are still manufactured separately and assembled using wire bonding process. Therefore, we establish for the first time a novel monolithic 1-chip transmit (Tx) filter that can be achieved with a minimum size of 1 mm × 1 mm x 0.8 mm using a suspended membrane FBAR, a integrated inductor, and wafer level packaging for 1900 MHz PCS handsets. The 1-chip filter has an insertion loss less than 2.86 dB in the pass band (1850 - 1910MHz) of US PCS Handsets. Attenuation characteristics is measured to show excellent performance at over 35 dB in Rx band (1930 - 1990 MHz) and over 25 dB in the below 1800MHz range
KW - 1-Chip filter
KW - FBAR
KW - Trimming inductor
KW - Wafer level packaging
UR - http://www.scopus.com/inward/record.url?scp=27544466407&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27544466407&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:27544466407
SN - 0780389948
T3 - Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
SP - 2069
EP - 2073
BT - TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
T2 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Y2 - 5 June 2005 through 9 June 2005
ER -