Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Seung Hwan Kim, Gwang Sik Kim, June Park, Changmin Lee, Hyoungsub Kim, Jiyoung Kim, Joon Hyung Shim, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact - which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH) - is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.

Original languageEnglish
Pages (from-to)26378-26386
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number31
Publication statusPublished - 2018 Aug 8

Bibliographical note

Publisher Copyright:
© 2018 American Chemical Society.


  • III-V semiconductor
  • conductive filament
  • fermi-level pinning
  • metal-induced gap state
  • metal-interlayer-semiconductor structure
  • source/drain contact

ASJC Scopus subject areas

  • General Materials Science


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