Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

F. Ren, B. Luo, J. Kim, R. Mehandru, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Original languageEnglish
Pages (from-to)291-304
Number of pages14
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
Externally publishedYes
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States
Duration: 2003 Apr 222003 Apr 24

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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