Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

F. Ren; B. Luo; J. Kim; R. Mehandru; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo; Y. Irokawa

doi:10.1557/proc-764-c4.1

Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

F. Ren, B. Luo, J. Kim, R. Mehandru, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Both MgO and Sc₂O₃ are shown to provide low interface state densities (in the 10₁₁ eV^-1 cm ^-2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 10¹² cm ^-2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc₂O₃ passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Original language	English
Pages (from-to)	291-304
Number of pages	14
Journal	Materials Research Society Symposium - Proceedings
Volume	764
DOIs	https://doi.org/10.1557/proc-764-c4.1
Publication status	Published - 2003
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States Duration: 2003 Apr 22 → 2003 Apr 24

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2003). Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface. Materials Research Society Symposium - Proceedings, 764, 291-304. https://doi.org/10.1557/proc-764-c4.1

Ren, F, Luo, B, Kim, J, Mehandru, R, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2003, 'Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface', Materials Research Society Symposium - Proceedings, vol. 764, pp. 291-304. https://doi.org/10.1557/proc-764-c4.1

@article{66fbb52b59144f1f93b691119473ba37,

title = "Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface",

abstract = "Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.",

author = "F. Ren and B. Luo and J. Kim and R. Mehandru and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",

year = "2003",

doi = "10.1557/proc-764-c4.1",

language = "English",

volume = "764",

pages = "291--304",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors ; Conference date: 22-04-2003 Through 24-04-2003",

}

TY - JOUR

T1 - Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

AU - Ren, F.

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

AU - Irokawa, Y.

PY - 2003

Y1 - 2003

N2 - Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

AB - Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

UR - http://www.scopus.com/inward/record.url?scp=0344496707&partnerID=8YFLogxK

U2 - 10.1557/proc-764-c4.1

DO - 10.1557/proc-764-c4.1

M3 - Conference article

AN - SCOPUS:0344496707

SN - 0272-9172

VL - 764

SP - 291

EP - 304

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors

Y2 - 22 April 2003 through 24 April 2003

ER -

Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

Abstract

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