Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

F. Ren; B. Luo; J. Kim; R. Mehandru; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo; Y. Irokawa

doi:10.1557/proc-764-c4.1

Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

F. Ren^*
, B. Luo
, J. Kim
, R. Mehandru
, B. P. Gila
, A. H. Onstine
, C. R. Abernathy
, S. J. Pearton
, R. Fitch
, J. Gillespie
, T. Jenkins
, J. Sewell
, D. Via
, A. Crespo
, Y. Irokawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Both MgO and Sc₂O₃ are shown to provide low interface state densities (in the 10₁₁ eV^-1 cm ^-2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 10¹² cm ^-2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc₂O₃ passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Original language	English
Pages (from-to)	291-304
Number of pages	14
Journal	Materials Research Society Symposium - Proceedings
Volume	764
DOIs	https://doi.org/10.1557/proc-764-c4.1
Publication status	Published - 2003
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States Duration: 2003 Apr 22 → 2003 Apr 24

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2003). Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface. Materials Research Society Symposium - Proceedings, 764, 291-304. https://doi.org/10.1557/proc-764-c4.1

Ren, F, Luo, B, Kim, J, Mehandru, R, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2003, 'Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface', Materials Research Society Symposium - Proceedings, vol. 764, pp. 291-304. https://doi.org/10.1557/proc-764-c4.1

@article{66fbb52b59144f1f93b691119473ba37,

title = "Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface",

abstract = "Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.",

author = "F. Ren and B. Luo and J. Kim and R. Mehandru and Gila, \{B. P.\} and Onstine, \{A. H.\} and Abernathy, \{C. R.\} and Pearton, \{S. J.\} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",

year = "2003",

doi = "10.1557/proc-764-c4.1",

language = "English",

volume = "764",

pages = "291--304",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors ; Conference date: 22-04-2003 Through 24-04-2003",

}

TY - JOUR

T1 - Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

AU - Ren, F.

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

AU - Irokawa, Y.

PY - 2003

Y1 - 2003

N2 - Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

AB - Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm -2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm -2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

UR - https://www.scopus.com/pages/publications/0344496707

U2 - 10.1557/proc-764-c4.1

DO - 10.1557/proc-764-c4.1

M3 - Conference article

AN - SCOPUS:0344496707

SN - 0272-9172

VL - 764

SP - 291

EP - 304

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors

Y2 - 22 April 2003 through 24 April 2003

ER -

Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

Abstract

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