Novel process to improve defect problems for thermal nanoimprint lithography

Hyung Seok Park; Ho Hyun Shin; Man Young Sung; Woo Beom Choi; Seung Woo Choi; Sang Yong Park

doi:10.1109/TSM.2006.890315

Novel process to improve defect problems for thermal nanoimprint lithography

Hyung Seok Park, Ho Hyun Shin, Man Young Sung, Woo Beom Choi, Seung Woo Choi, Sang Yong Park

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The reliability of imprint patterns molded by stamps for industrial application of nanoimprint lithography (NIL) is an important issue. Usually, defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon of polymers in conventional NIL. In this paper, the patterns that undergo a varied temperature or varied pressure period during the thermal NIL process have been investigated, with the goal of resolving the shrinkage and defective filling problems of polymers. This paper also studies the effects on the formation of polymer patterns in several profiles of imprint processes. Consequently, it is observed that more precise patterns are formed by varied temperature (VT-NIL) and varied pressure (VP-NIL). The NIL (VT-NIL and VP-NIL) process has a free space compensation effect on the polymers in stamp cavities. From the results of the experiments, the polymer's filling capability can be improved. VT-NIL is merged with the VP-NIL, resulting in a better filling property. The patterns that have been imprinted in merged NIL are compared with the results of conventional NIL. This study achieves improvement in the reliability of the results of thermal NIL.

Original language	English
Pages (from-to)	13-19
Number of pages	7
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	20
Issue number	1
DOIs	https://doi.org/10.1109/TSM.2006.890315
Publication status	Published - 2007 Feb

Bibliographical note

Funding Information:
Manuscript received March 28, 2005; revised March 29 2006. This work was supported by the Electric Power Industry Technology Evaluation & Planning, which are supported by the Ministry of Commerce, Industry & Energy and BNP Science, of Korea. H. S. Park, H. H. Shin, and M. Y. Sung are with the Department of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). W. B. Choi, S. W. Choi, and S. Y. Park are with BNP Science, GyeongGi-Do 413-843, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TSM.2006.890315

Keywords

Defect control
Free volume compensation
Nanoimprint lithography
Polymer shrinkage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2006.890315

Cite this

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title = "Novel process to improve defect problems for thermal nanoimprint lithography",

abstract = "The reliability of imprint patterns molded by stamps for industrial application of nanoimprint lithography (NIL) is an important issue. Usually, defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon of polymers in conventional NIL. In this paper, the patterns that undergo a varied temperature or varied pressure period during the thermal NIL process have been investigated, with the goal of resolving the shrinkage and defective filling problems of polymers. This paper also studies the effects on the formation of polymer patterns in several profiles of imprint processes. Consequently, it is observed that more precise patterns are formed by varied temperature (VT-NIL) and varied pressure (VP-NIL). The NIL (VT-NIL and VP-NIL) process has a free space compensation effect on the polymers in stamp cavities. From the results of the experiments, the polymer's filling capability can be improved. VT-NIL is merged with the VP-NIL, resulting in a better filling property. The patterns that have been imprinted in merged NIL are compared with the results of conventional NIL. This study achieves improvement in the reliability of the results of thermal NIL.",

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note = "Funding Information: Manuscript received March 28, 2005; revised March 29 2006. This work was supported by the Electric Power Industry Technology Evaluation & Planning, which are supported by the Ministry of Commerce, Industry & Energy and BNP Science, of Korea. H. S. Park, H. H. Shin, and M. Y. Sung are with the Department of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). W. B. Choi, S. W. Choi, and S. Y. Park are with BNP Science, GyeongGi-Do 413-843, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TSM.2006.890315",

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AU - Park, Sang Yong

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N2 - The reliability of imprint patterns molded by stamps for industrial application of nanoimprint lithography (NIL) is an important issue. Usually, defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon of polymers in conventional NIL. In this paper, the patterns that undergo a varied temperature or varied pressure period during the thermal NIL process have been investigated, with the goal of resolving the shrinkage and defective filling problems of polymers. This paper also studies the effects on the formation of polymer patterns in several profiles of imprint processes. Consequently, it is observed that more precise patterns are formed by varied temperature (VT-NIL) and varied pressure (VP-NIL). The NIL (VT-NIL and VP-NIL) process has a free space compensation effect on the polymers in stamp cavities. From the results of the experiments, the polymer's filling capability can be improved. VT-NIL is merged with the VP-NIL, resulting in a better filling property. The patterns that have been imprinted in merged NIL are compared with the results of conventional NIL. This study achieves improvement in the reliability of the results of thermal NIL.

AB - The reliability of imprint patterns molded by stamps for industrial application of nanoimprint lithography (NIL) is an important issue. Usually, defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon of polymers in conventional NIL. In this paper, the patterns that undergo a varied temperature or varied pressure period during the thermal NIL process have been investigated, with the goal of resolving the shrinkage and defective filling problems of polymers. This paper also studies the effects on the formation of polymer patterns in several profiles of imprint processes. Consequently, it is observed that more precise patterns are formed by varied temperature (VT-NIL) and varied pressure (VP-NIL). The NIL (VT-NIL and VP-NIL) process has a free space compensation effect on the polymers in stamp cavities. From the results of the experiments, the polymer's filling capability can be improved. VT-NIL is merged with the VP-NIL, resulting in a better filling property. The patterns that have been imprinted in merged NIL are compared with the results of conventional NIL. This study achieves improvement in the reliability of the results of thermal NIL.

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Novel process to improve defect problems for thermal nanoimprint lithography

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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