Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

Ho Young Chung; Kie Young Woo; Su Jin Kim; Kyeong Heon Kim; Hee Dong Kim; Tae Geun Kim

doi:10.1016/j.spmi.2013.09.014

Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

Ho Young Chung, Kie Young Woo, Su Jin Kim, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Superlattices and Microstructures
Volume	64
DOIs	https://doi.org/10.1016/j.spmi.2013.09.014
Publication status	Published - 2013

Keywords

Efficiency droop
Internal quantum efficiency
Light-emitting diodes
Numerical simulation
Quantum well and barrier

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2013.09.014

Cite this

@article{eb763e22c96f468eb46e53a66a2e529d,

title = "Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers",

abstract = "In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.",

keywords = "Efficiency droop, Internal quantum efficiency, Light-emitting diodes, Numerical simulation, Quantum well and barrier",

author = "Chung, {Ho Young} and Woo, {Kie Young} and Kim, {Su Jin} and Kim, {Kyeong Heon} and Kim, {Hee Dong} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (No. 2011-0028769 ).",

year = "2013",

doi = "10.1016/j.spmi.2013.09.014",

language = "English",

volume = "64",

pages = "1--6",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

AU - Chung, Ho Young

AU - Woo, Kie Young

AU - Kim, Su Jin

AU - Kim, Kyeong Heon

AU - Kim, Hee Dong

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (No. 2011-0028769 ).

PY - 2013

Y1 - 2013

N2 - In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.

AB - In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.

KW - Efficiency droop

KW - Internal quantum efficiency

KW - Light-emitting diodes

KW - Numerical simulation

KW - Quantum well and barrier

UR - http://www.scopus.com/inward/record.url?scp=84885160205&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2013.09.014

DO - 10.1016/j.spmi.2013.09.014

M3 - Article

AN - SCOPUS:84885160205

SN - 0749-6036

VL - 64

SP - 1

EP - 6

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this