Abstract
In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.
Original language | English |
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Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Superlattices and Microstructures |
Volume | 64 |
DOIs | |
Publication status | Published - 2013 |
Bibliographical note
Funding Information:This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (No. 2011-0028769 ).
Keywords
- Efficiency droop
- Internal quantum efficiency
- Light-emitting diodes
- Numerical simulation
- Quantum well and barrier
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering