Abstract
In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.
| Original language | English |
|---|---|
| Pages (from-to) | 16-21 |
| Number of pages | 6 |
| Journal | Journal of the Optical Society of Korea |
| Volume | 17 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 |
Keywords
- AlGaInN
- Light-emitting diodes (LEDs)
- Numerical simulation
- Quantum barriers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics