NURBS-based formulation for nonlinear electro-gradient elasticity in semiconductors

B. H. Nguyen; X. Zhuang; T. Rabczuk

doi:10.1016/j.cma.2018.08.026

NURBS-based formulation for nonlinear electro-gradient elasticity in semiconductors

B. H. Nguyen, X. Zhuang, T. Rabczuk

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the C¹ continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.

Original language	English
Pages (from-to)	1074-1095
Number of pages	22
Journal	Computer Methods in Applied Mechanics and Engineering
Volume	346
DOIs	https://doi.org/10.1016/j.cma.2018.08.026
Publication status	Published - 2019 Apr 1
Externally published	Yes

Bibliographical note

Funding Information:
The first and second authors owe the gratitude to the sponsorship from Sofja Kovalevskaja Programme of Alexander von Humboldt Foundation. The second author gratefullyacknowledges the funding State Key Laboratory of Structural Analysis for Industrial Equipment (GZ1607) and National Science Foundation of China (11772234).

Funding Information:
The first and second authors owe the gratitude to the sponsorship from Sofja Kovalevskaja Programme of Alexander von Humboldt Foundation. The second author gratefullyacknowledges the funding State Key Laboratory of Structural Analysis for Industrial Equipment ( GZ1607 ) and National Science Foundation of China ( 11772234 ).

Publisher Copyright:
© 2018 Elsevier B.V.

Keywords

Finite deformation
Flexoelectricity
Piezoelectricity
ZnO semiconductor

ASJC Scopus subject areas

Computational Mechanics
Mechanics of Materials
Mechanical Engineering
General Physics and Astronomy
Computer Science Applications

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10.1016/j.cma.2018.08.026

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abstract = "Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the C1 continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.",

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AU - Zhuang, X.

AU - Rabczuk, T.

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N2 - Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the C1 continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.

AB - Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the C1 continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.

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NURBS-based formulation for nonlinear electro-gradient elasticity in semiconductors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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