Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Chang Soo Park; Yu Zhao; Yoon Shon; Chong S. Yoon; Haigun Lee; Cheol Jin Lee

doi:10.1063/1.4893240

Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Chang Soo Park, Yu Zhao, Yoon Shon, Chong S. Yoon, Haigun Lee, Cheol Jin Lee

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn³⁺ and Mn⁴⁺ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

Original language	English
Article number	087120
Journal	AIP Advances
Volume	4
Issue number	8
DOIs	https://doi.org/10.1063/1.4893240
Publication status	Published - 2014 Aug

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene",

abstract = "We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.",

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AU - Park, Chang Soo

AU - Zhao, Yu

AU - Shon, Yoon

AU - Yoon, Chong S.

AU - Lee, Haigun

AU - Lee, Cheol Jin

PY - 2014/8

Y1 - 2014/8

N2 - We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

AB - We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

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VL - 4

JO - AIP Advances

JF - AIP Advances

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ER -

Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

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