Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Chang Soo Park, Yu Zhao, Yoon Shon, Chong S. Yoon, Haigun Lee, Cheol Jin Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

Original languageEnglish
Article number087120
JournalAIP Advances
Issue number8
Publication statusPublished - 2014 Aug

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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