Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Chang Soo Park; Yu Zhao; Yoon Shon; Chong S. Yoon; Haigun Lee; Cheol Jin Lee

doi:10.1063/1.4893240

Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Chang Soo Park, Yu Zhao, Yoon Shon, Chong S. Yoon, Haigun Lee^*, Cheol Jin Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn³⁺ and Mn⁴⁺ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

Original language	English
Article number	087120
Journal	AIP Advances
Volume	4
Issue number	8
DOIs	https://doi.org/10.1063/1.4893240
Publication status	Published - 2014 Aug

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.4893240

Cite this

@article{328896aaa52d4ba6870d5000271e2604,

title = "Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene",

abstract = "We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.",

author = "Park, \{Chang Soo\} and Yu Zhao and Yoon Shon and Yoon, \{Chong S.\} and Haigun Lee and Lee, \{Cheol Jin\}",

year = "2014",

month = aug,

doi = "10.1063/1.4893240",

language = "English",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

AU - Park, Chang Soo

AU - Zhao, Yu

AU - Shon, Yoon

AU - Yoon, Chong S.

AU - Lee, Haigun

AU - Lee, Cheol Jin

PY - 2014/8

Y1 - 2014/8

N2 - We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

AB - We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn3+ and Mn4+ on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

UR - https://www.scopus.com/pages/publications/84940255367

U2 - 10.1063/1.4893240

DO - 10.1063/1.4893240

M3 - Article

AN - SCOPUS:84940255367

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 087120

ER -

Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this