Keyphrases
Diode
100%
Nanostructures
100%
Polysilicon
100%
Field Electron Emission
100%
Top Electrode
37%
Si Substrate
25%
Vacuum Sealing
25%
Nanostructured Layers
25%
Silicon Layer
25%
Heavily Doped
12%
Ethanol
12%
Ohmic Contact
12%
Substrate Temperature
12%
N-type Si
12%
Glass Frit
12%
Electron Emission Characteristics
12%
Positive Bias
12%
Low Pressure Chemical Vapor Deposition (LPCVD)
12%
Morphological Analysis
12%
Vacuum Packaging
12%
Sealing Method
12%
Mixed Solution
12%
Packaging Process
12%
Electron Emission
12%
Non-doped
12%
Electrode Thickness
12%
E-beam Evaporator
12%
Evaporated Al
12%
Sealing Process
12%
Engineering
Electron Emission
100%
Porosity
100%
Polysilicon
100%
Si Substrate
50%
Silicon Layer
50%
Chemical Vapor Deposition
25%
Ohmic Contacts
25%
Substrate Temperature
25%
Vapor Deposition
25%
Glass Frit
25%
Evaporator
25%
Back Side
25%
Material Science
Silicon
100%
Anodizing
37%
Morphology
12%
Low Pressure Chemical Vapor Deposition
12%