Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song, Yujeong Seo, Soyun Park, Jae Hyuk Lee, Ho Myoung An, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

    Original languageEnglish
    Pages (from-to)6212-6215
    Number of pages4
    JournalJournal of Nanoscience and Nanotechnology
    Volume13
    Issue number9
    DOIs
    Publication statusPublished - 2013 Sept

    Keywords

    • Resistive switching
    • Voltage distribution
    • ZnO nanorod

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • Biomedical Engineering
    • General Materials Science
    • Condensed Matter Physics

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