Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song; Yujeong Seo; Soyun Park; Jae Hyuk Lee; Ho Myoung An; Tae Geun Kim

doi:10.1166/jnn.2013.7701

Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song, Yujeong Seo, Soyun Park, Jae Hyuk Lee, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

Original language	English
Pages (from-to)	6212-6215
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	9
DOIs	https://doi.org/10.1166/jnn.2013.7701
Publication status	Published - 2013 Sept

Keywords

Resistive switching
Voltage distribution
ZnO nanorod

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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title = "Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods",

abstract = "The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).",

keywords = "Resistive switching, Voltage distribution, ZnO nanorod",

author = "Song, {Min Yeong} and Yujeong Seo and Soyun Park and Lee, {Jae Hyuk} and An, {Ho Myoung} and Kim, {Tae Geun}",

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AU - Seo, Yujeong

AU - Park, Soyun

AU - Lee, Jae Hyuk

AU - An, Ho Myoung

AU - Kim, Tae Geun

PY - 2013/9

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N2 - The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

AB - The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

KW - Resistive switching

KW - Voltage distribution

KW - ZnO nanorod

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Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Abstract

Keywords

ASJC Scopus subject areas

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