Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song, Yujeong Seo, Soyun Park, Jae Hyuk Lee, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

Original languageEnglish
Pages (from-to)6212-6215
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number9
Publication statusPublished - 2013 Sept


  • Resistive switching
  • Voltage distribution
  • ZnO nanorod

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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