Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song; Yujeong Seo; Soyun Park; Jae Hyuk Lee; Ho Myoung An; Tae Geun Kim

doi:10.1166/jnn.2013.7701

Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song, Yujeong Seo, Soyun Park, Jae Hyuk Lee, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

Original language	English
Pages (from-to)	6212-6215
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	9
DOIs	https://doi.org/10.1166/jnn.2013.7701
Publication status	Published - 2013 Sept

Keywords

Resistive switching
Voltage distribution
ZnO nanorod

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2013.7701

Cite this

@article{a0a9b7a2b9cb481a950253c37ac819f8,

title = "Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods",

abstract = "The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).",

keywords = "Resistive switching, Voltage distribution, ZnO nanorod",

author = "Song, {Min Yeong} and Yujeong Seo and Soyun Park and Lee, {Jae Hyuk} and An, {Ho Myoung} and Kim, {Tae Geun}",

year = "2013",

month = sep,

doi = "10.1166/jnn.2013.7701",

language = "English",

volume = "13",

pages = "6212--6215",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "9",

}

TY - JOUR

T1 - Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

AU - Song, Min Yeong

AU - Seo, Yujeong

AU - Park, Soyun

AU - Lee, Jae Hyuk

AU - An, Ho Myoung

AU - Kim, Tae Geun

PY - 2013/9

Y1 - 2013/9

N2 - The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

AB - The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

KW - Resistive switching

KW - Voltage distribution

KW - ZnO nanorod

UR - http://www.scopus.com/inward/record.url?scp=84885455658&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885455658&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.7701

DO - 10.1166/jnn.2013.7701

M3 - Article

AN - SCOPUS:84885455658

SN - 1533-4880

VL - 13

SP - 6212

EP - 6215

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 9

ER -

Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this