Abstract
The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).
Original language | English |
---|---|
Pages (from-to) | 6212-6215 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 13 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2013 Sept |
Keywords
- Resistive switching
- Voltage distribution
- ZnO nanorod
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics