Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

Joondong Kim, Eung Sug Lee, Chang Soo Han, Youngjin Kang, Dojin Kim, Wayne A. Anderson

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm2 comparing to 76.5 μA/cm2 from a Si substrate at 5 V/μm.

Original languageEnglish
Pages (from-to)1709-1712
Number of pages4
JournalMicroelectronic Engineering
Issue number8
Publication statusPublished - 2008 Aug
Externally publishedYes

Bibliographical note

Funding Information:
The authors acknowledge the financial support from Daedeok Innopolis and Center for Nanoscale Mechatronics and Manufacturing of the 21C Frontier Research Program by the Ministry of Science and Technology (MOST) in Korea and National Science Foundation (ECS-0324893) in USA.


  • Field emission
  • Growth condition
  • Ni silicide nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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