Observation of room temperature magnetoresistance in a lateral ferromagnet-semiconductor structure

For an efficient spin-transport in a two-dimensional electron gas system, control of ferromagnet-semiconductor interface resistance is a very crucial factor and the clear spin-signal is detected in the range of 4 - 50 Ω μm² in our experiments. The magnetoresistance of the local spin-valve measurement slowly reduces with increasing temperature, but ΔR/R remains near 1% at room temperature. Based on the experimental results and calculations, our InAs channel system shows strong possibility for a spin transistor application.