Abstract
FeRh/FePt bilayers on MgO (100) substrates were fabricated by rf-magnetron sputtering, and the magnetic properties and microstructures of the bilayers were studied in terms of Ta addition to the storage layer. Compared to undoped FeRh/FePt bilayers, FeRh/FePt-Ta bilayer films showed improved magnetic properties and lower degree of interdiffusion. The FeRh/FePt-Ta bilayers clearly demonstrated the AFM-FM transition. Reduced interdiffusion by Ta segregation along grain boundaries was speculated to be a possible cause for the observed improvement in magnetic properties when fabricated at high temperature.
Original language | English |
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Article number | 5467680 |
Pages (from-to) | 2104-2107 |
Number of pages | 4 |
Journal | IEEE Transactions on Magnetics |
Volume | 46 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 Jun |
Bibliographical note
Funding Information:ACKNOWLEDGMENT This work was supported in part by Center for Nanoscale Mechatronics and Manufacturing under Grant 07-K1401-00910, one of the 21th Century Frontier Research Programs which are supported by the Ministry of Science and Technology, Korea.
Keywords
- FePt-Ta
- FeRh/FePt-Ta bilayer
- Ferromagnetic and antiferromagentic transition
- Interdiffusion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering