Observation of suppressed interdiffusion in FeRh/FePt-Ta bilayer thin films

  • Sung Uk Jang
  • , Eon Byeong Park
  • , Ji Hong Kim
  • , Ki Hoon Park
  • , Ji Sung Lee
  • , Young Keun Kim
  • , Seungmin Hyun
  • , Hak Joo Lee
  • , Soon Ju Kwon*
  • , Hwan Soo Lee
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    FeRh/FePt bilayers on MgO (100) substrates were fabricated by rf-magnetron sputtering, and the magnetic properties and microstructures of the bilayers were studied in terms of Ta addition to the storage layer. Compared to undoped FeRh/FePt bilayers, FeRh/FePt-Ta bilayer films showed improved magnetic properties and lower degree of interdiffusion. The FeRh/FePt-Ta bilayers clearly demonstrated the AFM-FM transition. Reduced interdiffusion by Ta segregation along grain boundaries was speculated to be a possible cause for the observed improvement in magnetic properties when fabricated at high temperature.

    Original languageEnglish
    Article number5467680
    Pages (from-to)2104-2107
    Number of pages4
    JournalIEEE Transactions on Magnetics
    Volume46
    Issue number6
    DOIs
    Publication statusPublished - 2010 Jun

    Bibliographical note

    Funding Information:
    ACKNOWLEDGMENT This work was supported in part by Center for Nanoscale Mechatronics and Manufacturing under Grant 07-K1401-00910, one of the 21th Century Frontier Research Programs which are supported by the Ministry of Science and Technology, Korea.

    Keywords

    • FePt-Ta
    • FeRh/FePt-Ta bilayer
    • Ferromagnetic and antiferromagentic transition
    • Interdiffusion

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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