TY - JOUR
T1 - Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy
AU - Song, J. D.
AU - Ok, Y. W.
AU - Kim, J. M.
AU - Lee, Y. T.
AU - Seong, T. Y.
N1 - Funding Information:
This work was partially supported by the BK 21 project and the National Program for Tera-level Nanodevices of the Ministry of Science and Technology. The authors are grateful to Dr. H.J. Song of KBSI for LT-PL measurements.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2001/11/12
Y1 - 2001/11/12
N2 - Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510°C. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1-1 1) positions, indicating the occurrence of CuPt-B ordering. As the growth temperature decreases, the superlattice spots move toward 1/2{-1 + δ, 1-δ, 0} positions, where the value of δ is 0.15. It is further shown that for the layers grown at temperatures in the range 445-490°C, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grown at temperatures in the range 470-510°C undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation.
AB - Transmission electron diffraction (TED) and reflection high-energy electron diffraction (RHEED) have been used to investigate GaInP molecular beam epitaxial layers grown at temperatures in the range 445-510°C. TED results reveal the presence of diffracted intensity at 1/2(-1 1 1) and 1/2(1-1 1) positions, indicating the occurrence of CuPt-B ordering. As the growth temperature decreases, the superlattice spots move toward 1/2{-1 + δ, 1-δ, 0} positions, where the value of δ is 0.15. It is further shown that for the layers grown at temperatures in the range 445-490°C, weak diffracted intensity is observed at 1/2(1 1 -1) and 1/2(1 1 1) positions, indicating the formation of CuPt-A ordering. Based on the TED and RHEED results, explanations are given to describe the formation of CuPt-A and CuPt-B type ordering. Photoluminescence results show that the samples grown at temperatures in the range 470-510°C undergo a bandgap reduction. This is attributed to the presence of ordered structures and composition modulation.
KW - GaInP
KW - Molecular beam epitaxy
KW - Ordering
KW - Photoluminescence
KW - Reflection high-energy electron diffraction
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=0035851303&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035851303&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(01)00543-8
DO - 10.1016/S0169-4332(01)00543-8
M3 - Article
AN - SCOPUS:0035851303
SN - 0169-4332
VL - 183
SP - 33
EP - 38
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-2
ER -