Abstract
Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.
Original language | English |
---|---|
Title of host publication | 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781665435536 |
DOIs | |
Publication status | Published - 2021 Jun 27 |
Event | 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 - Jeju, Korea, Republic of Duration: 2021 Jun 27 → 2021 Jun 30 |
Publication series
Name | 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 |
---|
Conference
Conference | 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 |
---|---|
Country/Territory | Korea, Republic of |
City | Jeju |
Period | 21/6/27 → 21/6/30 |
Bibliographical note
Funding Information:This work was supported in part by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2021-2018-0-01433) supervised by the IITP(Institute for Information & communications Technology Promotion), and in part by the National Research Foundation of Korea under Grant NRF-2015M3D1A1070465.
Publisher Copyright:
© 2021 IEEE.
Keywords
- Magnetic Tunnel Junction (MTJ)
- Read Margin
- Reliability
- Sense amplifier
- Spin-Transfer Torque (STT)
ASJC Scopus subject areas
- Artificial Intelligence
- Computer Networks and Communications
- Hardware and Architecture
- Information Systems
- Electrical and Electronic Engineering