Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs

Dongsu Kim; Jooyoon Kim; Jongsun Park

doi:10.1109/ITC-CSCC52171.2021.9501267

Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs

Dongsu Kim, Jooyoon Kim, Jongsun Park

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.

Original language	English
Title of host publication	2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665435536
DOIs	https://doi.org/10.1109/ITC-CSCC52171.2021.9501267
Publication status	Published - 2021 Jun 27
Event	36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 - Jeju, Korea, Republic of Duration: 2021 Jun 27 → 2021 Jun 30

Publication series

Name	2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021

Conference

Conference	36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
Country/Territory	Korea, Republic of
City	Jeju
Period	21/6/27 → 21/6/30

Bibliographical note

Funding Information:
This work was supported in part by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2021-2018-0-01433) supervised by the IITP(Institute for Information & communications Technology Promotion), and in part by the National Research Foundation of Korea under Grant NRF-2015M3D1A1070465.

Publisher Copyright:
© 2021 IEEE.

Keywords

Magnetic Tunnel Junction (MTJ)
Read Margin
Reliability
Sense amplifier
Spin-Transfer Torque (STT)

ASJC Scopus subject areas

Artificial Intelligence
Computer Networks and Communications
Hardware and Architecture
Information Systems
Electrical and Electronic Engineering

Access to Document

10.1109/ITC-CSCC52171.2021.9501267

Cite this

Kim, D., Kim, J., & Park, J. (2021). Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs. In 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 Article 9501267 (2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITC-CSCC52171.2021.9501267

Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs. / Kim, Dongsu; Kim, Jooyoon; Park, Jongsun.
2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9501267 (2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, D, Kim, J & Park, J 2021, Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs. in 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021., 9501267, 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021, Institute of Electrical and Electronics Engineers Inc., 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021, Jeju, Korea, Republic of, 21/6/27. https://doi.org/10.1109/ITC-CSCC52171.2021.9501267

Kim D, Kim J, Park J. Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs. In 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9501267. (2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021). doi: 10.1109/ITC-CSCC52171.2021.9501267

Kim, Dongsu ; Kim, Jooyoon ; Park, Jongsun. / Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs. 2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021).

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N2 - Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.

AB - Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.

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Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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