Offset-canceling Sensing Scheme using Feedback for Read Margin Improvement in STT-MRAMs

Dongsu Kim, Jooyoon Kim, Jongsun Park

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Spin transfer torque magnetic random access memory (STT-MRAM) has recently been a compelling candidate for next-generation memory. However, with the gradual scaling down of technology, the read reliability issue is emerging as a new challenge for STT-MRAM due to the increasing process variation and decreasing supply voltage. In addition, due to high read disturbance, it is difficult to increase read cell current to increase the sense margin. This paper proposes an offset-canceling sensing scheme using two capacitors, to improve sensing margin and accelerate read speed. Simulations using 28nm processes are run to demonstrate the performance of the proposed sensing circuit. According to the simulation results, the read error rate of the proposed sense scheme reaches 5.79E-06 with the read time of 1.8nsec.

    Original languageEnglish
    Title of host publication2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781665435536
    DOIs
    Publication statusPublished - 2021 Jun 27
    Event36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021 - Jeju, Korea, Republic of
    Duration: 2021 Jun 272021 Jun 30

    Publication series

    Name2021 36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021

    Conference

    Conference36th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2021
    Country/TerritoryKorea, Republic of
    CityJeju
    Period21/6/2721/6/30

    Bibliographical note

    Funding Information:
    This work was supported in part by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2021-2018-0-01433) supervised by the IITP(Institute for Information & communications Technology Promotion), and in part by the National Research Foundation of Korea under Grant NRF-2015M3D1A1070465.

    Publisher Copyright:
    © 2021 IEEE.

    Keywords

    • Magnetic Tunnel Junction (MTJ)
    • Read Margin
    • Reliability
    • Sense amplifier
    • Spin-Transfer Torque (STT)

    ASJC Scopus subject areas

    • Artificial Intelligence
    • Computer Networks and Communications
    • Hardware and Architecture
    • Information Systems
    • Electrical and Electronic Engineering

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