TY - GEN
T1 - On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection
AU - Kim, Seong Bin
AU - Geum, Jongmin
AU - Kyoung, Sinsu
AU - Sung, Man Young
N1 - Publisher Copyright:
© 2014 IEEE.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2014/1/23
Y1 - 2014/1/23
N2 - To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.
AB - To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.
UR - http://www.scopus.com/inward/record.url?scp=84946692120&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946692120&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2014.7021681
DO - 10.1109/ICSICT.2014.7021681
M3 - Conference contribution
AN - SCOPUS:84946692120
T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
A2 - Zhou, Jia
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Y2 - 28 October 2014 through 31 October 2014
ER -