On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection

Seong Bin Kim; Jongmin Geum; Sinsu Kyoung; Man Young Sung

doi:10.1109/ICSICT.2014.7021681

On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection

Seong Bin Kim, Jongmin Geum, Sinsu Kyoung, Man Young Sung

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021681
Publication status	Published - 2014 Jan 23
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 2014 Oct 28 → 2014 Oct 31

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	14/10/28 → 14/10/31

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1109/ICSICT.2014.7021681

Cite this

Kim, S. B., Geum, J., Kyoung, S., & Sung, M. Y. (2014). On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021681] (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021681

On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection. / Kim, Seong Bin; Geum, Jongmin; Kyoung, Sinsu et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021681 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, SB, Geum, J, Kyoung, S & Sung, MY 2014, On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021681, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 14/10/28. https://doi.org/10.1109/ICSICT.2014.7021681

Kim SB, Geum J, Kyoung S, Sung MY. On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection. In Zhou J, Tang T-A, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021681. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021681

Kim, Seong Bin ; Geum, Jongmin ; Kyoung, Sinsu et al. / On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

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title = "On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection",

abstract = "To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.",

author = "Kim, {Seong Bin} and Jongmin Geum and Sinsu Kyoung and Sung, {Man Young}",

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AB - To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.

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On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection

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