On design of a 55 GHz Si/SiGe HBT frequency doubler operating close to fmax

S. Bruce; M. Kim; A. Rydberg; K. M. Strohm; F. Beißwanger

doi:10.1109/EUMA.1996.337576

On design of a 55 GHz Si/SiGe HBT frequency doubler operating close to f_max

S. Bruce, M. Kim, A. Rydberg, K. M. Strohm, F. Beißwanger

School of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper we present for the first time experimental results on a frequency doubler using a Si/SiGe HBT as the non-linear element. Despite the high output operating frequency being close to f_max, 67 GHz, for the Si/SiGe HBT, the conversion efficiency in a not completely optimised circuit was founid to be better than -12 dB. The 3 dB bandwidth for the doubler was about 7.4%. These results are found to be comparable to an HFET doubler operating equally close to its fmax. The results agree well with the prediction for the multiplier from a developed physics-based large-signal HBT model. Prediction by the model using harmonic balance simulation at 55 GHz shows that a conversion efficiency for the Si/SiGe HBT of about 5dB can be expected from future optimised circuits.

Original language	English
Pages	297-299
Number of pages	3
DOIs	https://doi.org/10.1109/EUMA.1996.337576
Publication status	Published - 1996
Event	1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sept 6 → 1996 Sept 13

Other

Other	1996 26th European Microwave Conference, EuMC 1996
Country/Territory	Czech Republic
City	Prague
Period	96/9/6 → 96/9/13

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EUMA.1996.337576

Cite this

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title = "On design of a 55 GHz Si/SiGe HBT frequency doubler operating close to fmax",

abstract = "In this paper we present for the first time experimental results on a frequency doubler using a Si/SiGe HBT as the non-linear element. Despite the high output operating frequency being close to fmax, 67 GHz, for the Si/SiGe HBT, the conversion efficiency in a not completely optimised circuit was founid to be better than -12 dB. The 3 dB bandwidth for the doubler was about 7.4%. These results are found to be comparable to an HFET doubler operating equally close to its fmax. The results agree well with the prediction for the multiplier from a developed physics-based large-signal HBT model. Prediction by the model using harmonic balance simulation at 55 GHz shows that a conversion efficiency for the Si/SiGe HBT of about 5dB can be expected from future optimised circuits.",

author = "S. Bruce and M. Kim and A. Rydberg and Strohm, {K. M.} and F. Bei{\ss}wanger",

year = "1996",

doi = "10.1109/EUMA.1996.337576",

language = "English",

pages = "297--299",

note = "1996 26th European Microwave Conference, EuMC 1996 ; Conference date: 06-09-1996 Through 13-09-1996",

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T1 - On design of a 55 GHz Si/SiGe HBT frequency doubler operating close to fmax

AU - Bruce, S.

AU - Kim, M.

AU - Rydberg, A.

AU - Strohm, K. M.

AU - Beißwanger, F.

PY - 1996

Y1 - 1996

N2 - In this paper we present for the first time experimental results on a frequency doubler using a Si/SiGe HBT as the non-linear element. Despite the high output operating frequency being close to fmax, 67 GHz, for the Si/SiGe HBT, the conversion efficiency in a not completely optimised circuit was founid to be better than -12 dB. The 3 dB bandwidth for the doubler was about 7.4%. These results are found to be comparable to an HFET doubler operating equally close to its fmax. The results agree well with the prediction for the multiplier from a developed physics-based large-signal HBT model. Prediction by the model using harmonic balance simulation at 55 GHz shows that a conversion efficiency for the Si/SiGe HBT of about 5dB can be expected from future optimised circuits.

AB - In this paper we present for the first time experimental results on a frequency doubler using a Si/SiGe HBT as the non-linear element. Despite the high output operating frequency being close to fmax, 67 GHz, for the Si/SiGe HBT, the conversion efficiency in a not completely optimised circuit was founid to be better than -12 dB. The 3 dB bandwidth for the doubler was about 7.4%. These results are found to be comparable to an HFET doubler operating equally close to its fmax. The results agree well with the prediction for the multiplier from a developed physics-based large-signal HBT model. Prediction by the model using harmonic balance simulation at 55 GHz shows that a conversion efficiency for the Si/SiGe HBT of about 5dB can be expected from future optimised circuits.

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