On the Anisotropically Etched Bonding interface of Directly Bonded (100) Silicon Wafer Pairs

B. K. Ju, K. H. Tchah, M. H. Oh

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    We discovered that the shapes of the (111) facet structures were closely related to the disintegration, the spheroidization, and the stabilization of the native interfacial oxide layer in directly bonded Si wafer pairs. These (111) facet structures are generated from the anisotropic etching of (110) cross section of bonded (100) Si wafer pairs. After etching, the facet structures at the bonding interface look like a broken line as the interfacial oxide layers are disintegrated and spheroidized. When a uniform interfacial oxide layer is inserted between two silicon wafers, the oxide layer acts as an etch mask during anisotropic etching. Therefore, the (111) facet structure becomes wider and more pronounced. Also, we confirmed that most of the interfacial oxide existing at the bonding interface of well-aligned wafer pairs were disintegrated and spheroidized through a high temperature annealing process >900°C. Finally, we inferred from our measurements, the bonding strength (surface energy) increased as the interfacial oxide is stabilized, disintegrated, and spheroidized.

    Original languageEnglish
    Pages (from-to)547-553
    Number of pages7
    JournalJournal of the Electrochemical Society
    Volume142
    Issue number2
    DOIs
    Publication statusPublished - 1995 Feb

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Surfaces, Coatings and Films
    • Electrochemistry
    • Materials Chemistry

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