On the origin of spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova; M. Izadifard; W. M. Chen; J. Kim; F. Ren; G. Thaler; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi; J. M. Zavada

doi:10.1063/1.1695100

On the origin of spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.

Original language	English
Pages (from-to)	2599-2601
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695100
Publication status	Published - 2004 Apr 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1695100

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title = "On the origin of spin loss in GaMnN/InGaN light-emitting diodes",

abstract = "The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.",

author = "Buyanova, {I. A.} and M. Izadifard and Chen, {W. M.} and J. Kim and F. Ren and G. Thaler and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Zavada, {J. M.}",

year = "2004",

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doi = "10.1063/1.1695100",

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TY - JOUR

T1 - On the origin of spin loss in GaMnN/InGaN light-emitting diodes

AU - Buyanova, I. A.

AU - Izadifard, M.

AU - Chen, W. M.

AU - Kim, J.

AU - Ren, F.

AU - Thaler, G.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Zavada, J. M.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.

AB - The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.

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DO - 10.1063/1.1695100

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VL - 84

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EP - 2601

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

On the origin of spin loss in GaMnN/InGaN light-emitting diodes

Abstract

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