The analysis of spin polarization of GaMn/InGaN light-emitting diodes by molecular beam epitaxy was discussed. The diode were shown to exhibit very low efficiency of spin injection, in spite of the behavior of the GaMnN spin injector. The spin loss in the structure was shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroy any spin polarization by optical spin orientation of electrical spin injection. The magnetic measurements in a quantum design superconducting quantum interference device were also performed.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Apr 5|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)