TY - JOUR
T1 - On the reduced electrical conductivity of radio-frequency sputtered doped ceria thin film by elevating the substrate temperature
AU - Ji, Sanghoon
AU - An, Jihwan
AU - Jang, Dong Young
AU - Jee, Youngseok
AU - Shim, Joon Hyung
AU - Cha, Suk Won
N1 - Funding Information:
This work was supported by the Global Frontier R&D Program on Center for Multiscale Energy System funded by the National Research Foundation under the Ministry of Science, ICT & Future Planning, Korea ( 2015M3A6A7065442 ), and partially supported by the National Research Foundation (NRF) of Korea grant funded by the Korea government ( 2013R1A1A2A10065234 and 2011–0029576 ). In addition, Jihwan An acknowledges partial support from the NRF of Korea grant funded by the Korea government (NRF-2015R1D1A1A01058963).
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2016/3/1
Y1 - 2016/3/1
N2 - The electrical conductivity of ∼200 nm-thick gadolinium-doped ceria (GDC) thin films deposited at various substrate temperatures by radio-frequency sputtering was evaluated in a temperature range of 400°C-550°C as an electrolyte for solid oxide fuel cells operated at low temperatures. Morphological, chemical, and crystalline properties were discussed to determine the electrical conductivity; in particular, the electrical conductivity of GDC thin film deposited at 300°C was appreciably lower than that of GDC thin film deposited at 150°C. The columnar grain boundaries and the reduced ceria formed during the sputtering process are considered as the major factors leading to the measured results.
AB - The electrical conductivity of ∼200 nm-thick gadolinium-doped ceria (GDC) thin films deposited at various substrate temperatures by radio-frequency sputtering was evaluated in a temperature range of 400°C-550°C as an electrolyte for solid oxide fuel cells operated at low temperatures. Morphological, chemical, and crystalline properties were discussed to determine the electrical conductivity; in particular, the electrical conductivity of GDC thin film deposited at 300°C was appreciably lower than that of GDC thin film deposited at 150°C. The columnar grain boundaries and the reduced ceria formed during the sputtering process are considered as the major factors leading to the measured results.
KW - Electrical conductivity
KW - Gadolinium-doped ceria
KW - Radio frequency sputtering
KW - Solid oxide fuel cell
KW - Substrate temperature
UR - http://www.scopus.com/inward/record.url?scp=84952836615&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2015.12.011
DO - 10.1016/j.cap.2015.12.011
M3 - Article
AN - SCOPUS:84952836615
SN - 1567-1739
VL - 16
SP - 324
EP - 328
JO - Current Applied Physics
JF - Current Applied Physics
IS - 3
ER -