On the scaling limits of low-frequency noise in SiGe HBTs

Jarle A. Johansen, Zhenrong Jin, John D. Cressler, Yan Cui, Guofu Niu, Qingqing Liang, Jae Sung Rieh, Greg Freeman, Dave Ahlgren, Alvin Joseph

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak fT of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.

Original languageEnglish
Pages (from-to)1897-1900
Number of pages4
JournalSolid-State Electronics
Issue number10-11 SPEC. ISS.
Publication statusPublished - 2004 Oct
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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