On the scaling limits of low-frequency noise in SiGe HBTs

Jarle A. Johansen; Zhenrong Jin; John D. Cressler; Yan Cui; Guofu Niu; Qingqing Liang; Jae Sung Rieh; Greg Freeman; Dave Ahlgren; Alvin Joseph

doi:10.1016/j.sse.2004.05.032

On the scaling limits of low-frequency noise in SiGe HBTs

Jarle A. Johansen, Zhenrong Jin, John D. Cressler, Yan Cui, Guofu Niu, Qingqing Liang, Jae Sung Rieh, Greg Freeman, Dave Ahlgren, Alvin Joseph

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak f_T of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.

Original language	English
Pages (from-to)	1897-1900
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	10-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.sse.2004.05.032
Publication status	Published - 2004 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2004.05.032

Cite this

@article{26e60a1bda32450bb80acccf7629eaa4,

title = "On the scaling limits of low-frequency noise in SiGe HBTs",

abstract = "The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak fT of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.",

author = "Johansen, {Jarle A.} and Zhenrong Jin and Cressler, {John D.} and Yan Cui and Guofu Niu and Qingqing Liang and Rieh, {Jae Sung} and Greg Freeman and Dave Ahlgren and Alvin Joseph",

note = "Funding Information: This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.",

year = "2004",

month = oct,

doi = "10.1016/j.sse.2004.05.032",

language = "English",

volume = "48",

pages = "1897--1900",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "10-11 SPEC. ISS.",

}

TY - JOUR

T1 - On the scaling limits of low-frequency noise in SiGe HBTs

AU - Johansen, Jarle A.

AU - Jin, Zhenrong

AU - Cressler, John D.

AU - Cui, Yan

AU - Niu, Guofu

AU - Liang, Qingqing

AU - Rieh, Jae Sung

AU - Freeman, Greg

AU - Ahlgren, Dave

AU - Joseph, Alvin

N1 - Funding Information: This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.

PY - 2004/10

Y1 - 2004/10

N2 - The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak fT of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.

AB - The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak fT of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.

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U2 - 10.1016/j.sse.2004.05.032

DO - 10.1016/j.sse.2004.05.032

M3 - Article

AN - SCOPUS:3142718476

SN - 0038-1101

VL - 48

SP - 1897

EP - 1900

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10-11 SPEC. ISS.

ER -

On the scaling limits of low-frequency noise in SiGe HBTs

Abstract

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