On the scaling limits of low-frequency noise in SiGe HBTs

Jarle A. Johansen, Zhenrong Jin, John D. Cressler, Yan Cui, Guofu Niu, Qingqing Liang, Jae Sung Rieh, Greg Freeman, Dave Ahlgren, Alvin Joseph

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low noise corner frequencies of 220 Hz in SiGe HBTs with a peak fT of 210 GHz. An explanation for this behavior based on a reduction of the number of dominant noisy traps is offered, and microscopic 2-D simulations of noise are used to support this claim and explore the origins and scaling limits of low-frequency noise in advanced SiGe HBTs.

Original languageEnglish
Pages (from-to)1897-1900
Number of pages4
JournalSolid-State Electronics
Issue number10-11 SPEC. ISS.
Publication statusPublished - 2004 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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