On the scaling limits of low-frequency noise in SiGe HBTs

J. Johansen; Z. Jin; J. D. Cressler; Y. Cui; G. Niu; Q. Liang; J. S. Rieh; G. Freeman; D. Ahlgren; A. Joseph

doi:10.1109/ISDRS.2003.1271972

On the scaling limits of low-frequency noise in SiGe HBTs

J. Johansen, Z. Jin, J. D. Cressler, Y. Cui, G. Niu, Q. Liang, J. S. Rieh, G. Freeman, D. Ahlgren, A. Joseph

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	12-13
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1271972
Publication status	Published - 2003
Externally published	Yes
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 2003 Dec 10 → 2003 Dec 12

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

Other	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	03/12/10 → 03/12/12

Bibliographical note

Funding Information:
This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2003.1271972

Cite this

Johansen, J., Jin, Z., Cressler, J. D., Cui, Y., Niu, G., Liang, Q., Rieh, J. S., Freeman, G., Ahlgren, D., & Joseph, A. (2003). On the scaling limits of low-frequency noise in SiGe HBTs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 12-13). Article 1271972 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1271972

On the scaling limits of low-frequency noise in SiGe HBTs. / Johansen, J.; Jin, Z.; Cressler, J. D. et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 12-13 1271972 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Johansen, J, Jin, Z, Cressler, JD, Cui, Y, Niu, G, Liang, Q, Rieh, JS, Freeman, G, Ahlgren, D & Joseph, A 2003, On the scaling limits of low-frequency noise in SiGe HBTs. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1271972, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 12-13, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 03/12/10. https://doi.org/10.1109/ISDRS.2003.1271972

Johansen J, Jin Z, Cressler JD, Cui Y, Niu G, Liang Q et al. On the scaling limits of low-frequency noise in SiGe HBTs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 12-13. 1271972. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1271972

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abstract = "Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.",

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note = "Funding Information: This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.; International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

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AU - Jin, Z.

AU - Cressler, J. D.

AU - Cui, Y.

AU - Niu, G.

AU - Liang, Q.

AU - Rieh, J. S.

AU - Freeman, G.

AU - Ahlgren, D.

AU - Joseph, A.

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Y1 - 2003

N2 - Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

AB - Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

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ER -

On the scaling limits of low-frequency noise in SiGe HBTs

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Bibliographical note

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