On the scaling limits of low-frequency noise in SiGe HBTs

J. Johansen; Z. Jin; J. D. Cressler; Y. Cui; G. Niu; Q. Liang; J. S. Rieh; G. Freeman; D. Ahlgren; A. Joseph

doi:10.1109/ISDRS.2003.1271972

On the scaling limits of low-frequency noise in SiGe HBTs

J. Johansen, Z. Jin, J. D. Cressler, Y. Cui, G. Niu, Q. Liang, J. S. Rieh, G. Freeman, D. Ahlgren, A. Joseph

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	12-13
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1271972
Publication status	Published - 2003
Externally published	Yes
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 2003 Dec 10 → 2003 Dec 12

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Other

Other	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	03/12/10 → 03/12/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2003.1271972

Cite this

Johansen, J., Jin, Z., Cressler, J. D., Cui, Y., Niu, G., Liang, Q., Rieh, J. S., Freeman, G., Ahlgren, D., & Joseph, A. (2003). On the scaling limits of low-frequency noise in SiGe HBTs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 12-13). [1271972] (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1271972

On the scaling limits of low-frequency noise in SiGe HBTs. / Johansen, J.; Jin, Z.; Cressler, J. D. et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 12-13 1271972 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Johansen, J, Jin, Z, Cressler, JD, Cui, Y, Niu, G, Liang, Q, Rieh, JS, Freeman, G, Ahlgren, D & Joseph, A 2003, On the scaling limits of low-frequency noise in SiGe HBTs. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1271972, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 12-13, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 03/12/10. https://doi.org/10.1109/ISDRS.2003.1271972

Johansen J, Jin Z, Cressler JD, Cui Y, Niu G, Liang Q et al. On the scaling limits of low-frequency noise in SiGe HBTs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 12-13. 1271972. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1271972

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title = "On the scaling limits of low-frequency noise in SiGe HBTs",

abstract = "Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.",

author = "J. Johansen and Z. Jin and Cressler, {J. D.} and Y. Cui and G. Niu and Q. Liang and Rieh, {J. S.} and G. Freeman and D. Ahlgren and A. Joseph",

note = "Funding Information: This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.; International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

year = "2003",

doi = "10.1109/ISDRS.2003.1271972",

language = "English",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - On the scaling limits of low-frequency noise in SiGe HBTs

AU - Johansen, J.

AU - Jin, Z.

AU - Cressler, J. D.

AU - Cui, Y.

AU - Niu, G.

AU - Liang, Q.

AU - Rieh, J. S.

AU - Freeman, G.

AU - Ahlgren, D.

AU - Joseph, A.

N1 - Funding Information: This work was supported by a Fulbright Fellowship (J. Johansen), the Semiconductor Research Corporation, IBM, and the Georgia Electronic Design Center at Georgia Tech. The wafers were fabricated at IBM Microelectronics, Essex Junction, VT.

PY - 2003

Y1 - 2003

N2 - Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

AB - Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

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M3 - Conference contribution

AN - SCOPUS:4043090768

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 12

EP - 13

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

On the scaling limits of low-frequency noise in SiGe HBTs

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