One-pot fabrication of hollow SiO2 nanowires via an electrospinning technique

Geon Hyoung An; Sang Yong Jeong; Tae Yeon Seong; Hyo Jin Ahn

doi:10.1016/j.matlet.2011.05.043

One-pot fabrication of hollow SiO₂ nanowires via an electrospinning technique

Geon Hyoung An, Sang Yong Jeong, Tae Yeon Seong, Hyo Jin Ahn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Hollow SiO₂ nanowires (NWs) were one-pot fabricated via an electrospinning method. Their morphologies, structures, and chemical compositions were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In order to fabricate optimum hollow SiO₂ NWs, the relative volume ratio of tetraethyl orthosilicate (TEOS, an alkoxide precursor) to ethanol (solvent) was systematically controlled from 0.02 to 0.36. SEM, HRTEM, XRD, and XPS results indicate that amorphous SiO₂ hollow NWs can be one-pot synthesized by using the volume ratio of 0.18 under a constant voltage of 8.0 kV.

Original language	English
Pages (from-to)	2377-2380
Number of pages	4
Journal	Materials Letters
Volume	65
Issue number	15-16
DOIs	https://doi.org/10.1016/j.matlet.2011.05.043
Publication status	Published - 2011 Aug

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010–0005302 ).

Keywords

Electrospinning
Hollow structures
Nanowire
SiO

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2011.05.043

Cite this

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title = "One-pot fabrication of hollow SiO2 nanowires via an electrospinning technique",

abstract = "Hollow SiO2 nanowires (NWs) were one-pot fabricated via an electrospinning method. Their morphologies, structures, and chemical compositions were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In order to fabricate optimum hollow SiO2 NWs, the relative volume ratio of tetraethyl orthosilicate (TEOS, an alkoxide precursor) to ethanol (solvent) was systematically controlled from 0.02 to 0.36. SEM, HRTEM, XRD, and XPS results indicate that amorphous SiO2 hollow NWs can be one-pot synthesized by using the volume ratio of 0.18 under a constant voltage of 8.0 kV.",

keywords = "Electrospinning, Hollow structures, Nanowire, SiO",

author = "An, {Geon Hyoung} and Jeong, {Sang Yong} and Seong, {Tae Yeon} and Ahn, {Hyo Jin}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010–0005302 ).",

year = "2011",

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AU - An, Geon Hyoung

AU - Jeong, Sang Yong

AU - Seong, Tae Yeon

AU - Ahn, Hyo Jin

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010–0005302 ).

PY - 2011/8

Y1 - 2011/8

N2 - Hollow SiO2 nanowires (NWs) were one-pot fabricated via an electrospinning method. Their morphologies, structures, and chemical compositions were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In order to fabricate optimum hollow SiO2 NWs, the relative volume ratio of tetraethyl orthosilicate (TEOS, an alkoxide precursor) to ethanol (solvent) was systematically controlled from 0.02 to 0.36. SEM, HRTEM, XRD, and XPS results indicate that amorphous SiO2 hollow NWs can be one-pot synthesized by using the volume ratio of 0.18 under a constant voltage of 8.0 kV.

AB - Hollow SiO2 nanowires (NWs) were one-pot fabricated via an electrospinning method. Their morphologies, structures, and chemical compositions were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In order to fabricate optimum hollow SiO2 NWs, the relative volume ratio of tetraethyl orthosilicate (TEOS, an alkoxide precursor) to ethanol (solvent) was systematically controlled from 0.02 to 0.36. SEM, HRTEM, XRD, and XPS results indicate that amorphous SiO2 hollow NWs can be one-pot synthesized by using the volume ratio of 0.18 under a constant voltage of 8.0 kV.

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