One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

Yun Hi Lee; Jong Hee Lee; Ji Young Noh

doi:10.1063/1.2838736

One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

Yun Hi Lee, Jong Hee Lee, Ji Young Noh

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The authors report on the in situ formation of n -type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n -type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge.

Original language	English
Article number	043110
Journal	Applied Physics Letters
Volume	92
Issue number	4
DOIs	https://doi.org/10.1063/1.2838736
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported in part by the National Research Laboratory Program of the Ministry of Science and Technology of Korea (KOSEF), in part by Nano Basic Technology of KOSEF, and in part by the Pure Basic Research Group Project (C00054) of the Korea Research Foundation.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2838736

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title = "One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes",

abstract = "The authors report on the in situ formation of n -type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n -type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge.",

author = "Lee, {Yun Hi} and Lee, {Jong Hee} and Noh, {Ji Young}",

note = "Funding Information: This work was supported in part by the National Research Laboratory Program of the Ministry of Science and Technology of Korea (KOSEF), in part by Nano Basic Technology of KOSEF, and in part by the Pure Basic Research Group Project (C00054) of the Korea Research Foundation.",

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doi = "10.1063/1.2838736",

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T1 - One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

AU - Lee, Yun Hi

AU - Lee, Jong Hee

AU - Noh, Ji Young

N1 - Funding Information: This work was supported in part by the National Research Laboratory Program of the Ministry of Science and Technology of Korea (KOSEF), in part by Nano Basic Technology of KOSEF, and in part by the Pure Basic Research Group Project (C00054) of the Korea Research Foundation.

PY - 2008

Y1 - 2008

N2 - The authors report on the in situ formation of n -type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n -type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge.

AB - The authors report on the in situ formation of n -type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n -type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge.

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 043110

ER -

One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

Abstract

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