Abstract
With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.
Original language | English |
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Title of host publication | Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 |
Editors | Mike Melloch, Mark A. Reed |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 151-154 |
Number of pages | 4 |
ISBN (Print) | 0780338839, 9780780338838 |
DOIs | |
Publication status | Published - 1997 |
Externally published | Yes |
Event | 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 1997 Sept 8 → 1997 Sept 11 |
Publication series
Name | Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 |
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Conference
Conference | 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 |
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Country/Territory | United States |
City | San Diego |
Period | 97/9/8 → 97/9/11 |
Bibliographical note
Publisher Copyright:© 1998 IEEE.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials