With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.
|Title of host publication||Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997|
|Editors||Mike Melloch, Mark A. Reed|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|ISBN (Print)||0780338839, 9780780338838|
|Publication status||Published - 1997|
|Event||24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States|
Duration: 1997 Sept 8 → 1997 Sept 11
|Name||Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997|
|Conference||24th IEEE International Symposium on Compound Semiconductors, ISCS 1997|
|Period||97/9/8 → 97/9/11|
Bibliographical noteFunding Information:
This work was partially supported by the KOSEF-SPRC and the MOST(Contract No. 2N15920).
© 1998 IEEE.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials