@inproceedings{bab088f0970346919bec61806985c6ff,
title = "One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 ",
abstract = "With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.",
author = "Kim, {Eun Kyu} and Kim, {Tae Geun} and Son, {Chang Sik} and Kim, {Seong Il} and Park, {Y. K.} and Yong Kim and Min, {Suk Ki} and Choi, {In Hoon}",
note = "Funding Information: This work was partially supported by the KOSEF-SPRC and the MOST(Contract No. 2N15920). Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
year = "1997",
doi = "10.1109/ISCS.1998.711602",
language = "English",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "151--154",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
}