One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4

Eun Kyu Kim; Tae Geun Kim; Chang Sik Son; Seong Il Kim; Y. K. Park; Yong Kim; Suk Ki Min; In Hoon Choi

doi:10.1109/ISCS.1998.711602

One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr₄ and CCl₄

Eun Kyu Kim, Tae Geun Kim, Chang Sik Son, Seong Il Kim, Y. K. Park, Yong Kim, Suk Ki Min, In Hoon Choi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

With carbon tetrabromide (CBr₄) and carbon tetrachloride (CCl₄) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr₄ and CCl₄, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	151-154
Number of pages	4
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711602
Publication status	Published - 1997
Externally published	Yes
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 1997 Sept 8 → 1997 Sept 11

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	97/9/8 → 97/9/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.1998.711602

Cite this

Kim, E. K., Kim, T. G., Son, C. S., Kim, S. I., Park, Y. K., Kim, Y., Min, S. K., & Choi, I. H. (1997). One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr₄ and CCl₄ In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 151-154). Article 711602 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711602

One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr₄ and CCl₄ . / Kim, Eun Kyu; Kim, Tae Geun; Son, Chang Sik et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 151-154 711602 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, EK, Kim, TG, Son, CS, Kim, SI, Park, YK, Kim, Y, Min, SK & Choi, IH 1997, One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr₄ and CCl₄ in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711602, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 151-154, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97/9/8. https://doi.org/10.1109/ISCS.1998.711602

Kim EK, Kim TG, Son CS, Kim SI, Park YK, Kim Y et al. One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr₄ and CCl₄ In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 151-154. 711602. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711602

Kim, Eun Kyu ; Kim, Tae Geun ; Son, Chang Sik et al. / One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr₄ and CCl₄ Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 151-154 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

@inproceedings{bab088f0970346919bec61806985c6ff,

title = "One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 ",

abstract = "With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.",

author = "Kim, {Eun Kyu} and Kim, {Tae Geun} and Son, {Chang Sik} and Kim, {Seong Il} and Park, {Y. K.} and Yong Kim and Min, {Suk Ki} and Choi, {In Hoon}",

note = "Funding Information: This work was partially supported by the KOSEF-SPRC and the MOST(Contract No. 2N15920). Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

year = "1997",

doi = "10.1109/ISCS.1998.711602",

language = "English",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "151--154",

editor = "Mike Melloch and Reed, {Mark A.}",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

}

TY - GEN

T1 - One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4

AU - Kim, Eun Kyu

AU - Kim, Tae Geun

AU - Son, Chang Sik

AU - Kim, Seong Il

AU - Park, Y. K.

AU - Kim, Yong

AU - Min, Suk Ki

AU - Choi, In Hoon

PY - 1997

Y1 - 1997

N2 - With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.

AB - With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CCl4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.

UR - http://www.scopus.com/inward/record.url?scp=56249135314&partnerID=8YFLogxK

U2 - 10.1109/ISCS.1998.711602

DO - 10.1109/ISCS.1998.711602

M3 - Conference contribution

AN - SCOPUS:56249135314

SN - 0780338839

SN - 9780780338838

T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

SP - 151

EP - 154

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997

Y2 - 8 September 1997 through 11 September 1997

ER -