One transistor-one resistor devices for polymer non-volatile memory applications

1T-1R hybrid-type devices consisting of a silicon transistor (p-MOSFET) and a resistive polymer memory that can be used as a nonvolatile memory cell element, was demonstrated. A polymer non-volatile memory device with crosspoint architecture was fabricated on the drain side of the Si transistor, which was used as the bottom electrode. The drain current was saturated for a gate bias of -2.0 V, exhibiting typical long-channel p-MOSFET behavior. The I _D-V_D and drain current versus gate voltage characteristics of the IT-I R device was performed to evaluate I-V characteristics of the p-MOSFET connected to the polymer memory. The difference in drain current was about three orders of magnitude indicating that the drain current of the IT-IR device can be controlled by the resistance states of the polymer memory device, at a fluxed drain bias. Individual p-MOSFET ad polymer memory devices exhibited typical p-channel transistor and nonvolatile memory properties.