One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Sangik Choi; Jaemin Son; Kyoungah Cho; Sangsig Kim

doi:10.1038/s41598-021-97479-x

One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Sangik Choi, Jaemin Son, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 10⁸ cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the “0” state and 6 nW for holding the “1” state. For a selected cell in the 2 × 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.

Original language	English
Article number	17983
Journal	Scientific reports
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41598-021-97479-x
Publication status	Published - 2021 Dec

Bibliographical note

Funding Information:
This research was partially supported by the Ministry of Trade, Industry & Energy (MOTIE; 10067791) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT; 2020R1A2C3004538), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning, and the Korea University Grant.

Publisher Copyright:
© 2021, The Author(s).

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title = "One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors",

abstract = "In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 108 cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the “0” state and 6 nW for holding the “1” state. For a selected cell in the 2 × 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.",

author = "Sangik Choi and Jaemin Son and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This research was partially supported by the Ministry of Trade, Industry & Energy (MOTIE; 10067791) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT; 2020R1A2C3004538), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning, and the Korea University Grant. Publisher Copyright: {\textcopyright} 2021, The Author(s).",

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N1 - Funding Information: This research was partially supported by the Ministry of Trade, Industry & Energy (MOTIE; 10067791) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT; 2020R1A2C3004538), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning, and the Korea University Grant. Publisher Copyright: © 2021, The Author(s).

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N2 - In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 108 cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the “0” state and 6 nW for holding the “1” state. For a selected cell in the 2 × 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.

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One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Abstract

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