Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices

M. A. Mastro; J. K. Hite; C. R. Eddy; M. J. Tadjer; S. J. Pearton; F. Ren; J. Kim

doi:10.1142/9789811216480_0007

Opportunities and Challenges in MOCVD of β-Ga₂O₃ for Power Electronic Devices

M. A. Mastro, J. K. Hite, C. R. Eddy, M. J. Tadjer, S. J. Pearton, F. Ren, J. Kim

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Recent breakthroughs in bulk crystal growth of β-Ga₂O₃ by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga₂O₃ substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga₂O₃ based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga₂O₃ and the design criteria for use of this material system in power electronic device structures.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Electronics and Devices
Publisher	World Scientific Publishing Co.
Pages	127-144
Number of pages	18
ISBN (Electronic)	9789811216480
DOIs	https://doi.org/10.1142/9789811216480_0007
Publication status	Published - 2019 Jan 1

Bibliographical note

Publisher Copyright:
© 2020 by World Scientific Publishing Co. Pte. Ltd.

Keywords

Gallium oxide
MOCVD
Power electronic device

ASJC Scopus subject areas

General Engineering

Access to Document

10.1142/9789811216480_0007

Cite this

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title = "Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices",

abstract = "Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.",

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T1 - Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices

AU - Mastro, M. A.

AU - Hite, J. K.

AU - Eddy, C. R.

AU - Tadjer, M. J.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kim, J.

PY - 2019/1/1

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AB - Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

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KW - MOCVD

KW - Power electronic device

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EP - 144

BT - Wide Bandgap Semiconductor Electronics and Devices

PB - World Scientific Publishing Co.

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