Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices

M. A. Mastro, J. K. Hite, C. R. Eddy, M. J. Tadjer, S. J. Pearton, F. Ren, J. Kim

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Electronics and Devices
PublisherWorld Scientific Publishing Co.
Pages127-144
Number of pages18
ISBN (Electronic)9789811216480
DOIs
Publication statusPublished - 2019 Jan 1

Bibliographical note

Publisher Copyright:
© 2020 by World Scientific Publishing Co. Pte. Ltd.

Keywords

  • Gallium oxide
  • MOCVD
  • Power electronic device

ASJC Scopus subject areas

  • General Engineering

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