Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy

Jihyun Kim; F. Ren; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; N. Y. Pashova; G. T. Thaler; M. E. Overberg; C. R. Abernathy; S. J. Pearton

doi:10.1149/1.1511343

Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy

Jihyun Kim, F. Ren, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. Y. Pashova, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of E_C - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 10⁷ ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.

Original language	English
Pages (from-to)	G103-G105
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1149/1.1511343
Publication status	Published - 2002 Nov
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{77484548521f48059873c3c321967410,

title = "Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy",

abstract = "GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.",

author = "Jihyun Kim and F. Ren and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Pashova, {N. Y.} and Thaler, {G. T.} and Overberg, {M. E.} and Abernathy, {C. R.} and Pearton, {S. J.}",

year = "2002",

month = nov,

doi = "10.1149/1.1511343",

language = "English",

volume = "5",

pages = "G103--G105",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "11",

}

TY - JOUR

T1 - Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy

AU - Kim, Jihyun

AU - Ren, F.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Pashova, N. Y.

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Abernathy, C. R.

AU - Pearton, S. J.

PY - 2002/11

Y1 - 2002/11

N2 - GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.

AB - GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.

UR - http://www.scopus.com/inward/record.url?scp=17544397007&partnerID=8YFLogxK

U2 - 10.1149/1.1511343

DO - 10.1149/1.1511343

M3 - Article

AN - SCOPUS:17544397007

SN - 1099-0062

VL - 5

SP - G103-G105

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy

Abstract

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