GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of EC - 1.9 eV. Electrical measurements showed the material to be high resistivity (3.2 × 107 ω cm) n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2002 Nov|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering