Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Young Joon Han; Kunsik An; Kyung Tae Kang; Byeong Kwon Ju; Kwan Hyun Cho

doi:10.1038/s41598-019-46858-6

Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Young Joon Han, Kunsik An, Kyung Tae Kang, Byeong Kwon Ju, Kwan Hyun Cho

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.

Original language	English
Article number	10385
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-46858-6
Publication status	Published - 2019 Dec 1

Bibliographical note

Funding Information:
This study was conducted with support from the Korea Institute of Industrial Technology as Research Source Technique Project (KITECH, EO-190008), supported by the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and supported by Ministry of Trade, Industry & Energy (MOTIE, No.10077471).

Publisher Copyright:
© 2019, The Author(s).

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title = "Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes",

abstract = "In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.",

author = "Han, {Young Joon} and Kunsik An and Kang, {Kyung Tae} and Ju, {Byeong Kwon} and Cho, {Kwan Hyun}",

note = "Funding Information: This study was conducted with support from the Korea Institute of Industrial Technology as Research Source Technique Project (KITECH, EO-190008), supported by the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and supported by Ministry of Trade, Industry & Energy (MOTIE, No.10077471). Publisher Copyright: {\textcopyright} 2019, The Author(s).",

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AU - Cho, Kwan Hyun

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N2 - In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.

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Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Abstract

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