Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

I. A. Buyanova; M. Izadifard; L. Storasta; W. M. Chen; Jihyun Kim; F. Ren; G. Thaler; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi; J. M. Zavada

doi:10.1007/s11664-004-0204-9

Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

I. A. Buyanova, M. Izadifard, L. Storasta, W. M. Chen, Jihyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

(Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

Original language	English
Pages (from-to)	467-471
Number of pages	5
Journal	Journal of Electronic Materials
Volume	33
Issue number	5
DOIs	https://doi.org/10.1007/s11664-004-0204-9
Publication status	Published - 2004 May
Externally published	Yes

Keywords

(Ga,Mn)N/InGaN
Light-emitting diode (LED)
Molecular beam epitaxy (MBE)
Multiquantum well (MQW)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-004-0204-9

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Buyanova, I. A., Izadifard, M., Storasta, L., Chen, W. M., Kim, J., Ren, F., Thaler, G., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., Chyi, J. I., & Zavada, J. M. (2004). Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes. Journal of Electronic Materials, 33(5), 467-471. https://doi.org/10.1007/s11664-004-0204-9

@article{5b5b7bdc962543838ab6ef44c368a3fc,

title = "Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes",

abstract = "(Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.",

keywords = "(Ga,Mn)N/InGaN, Light-emitting diode (LED), Molecular beam epitaxy (MBE), Multiquantum well (MQW)",

author = "Buyanova, {I. A.} and M. Izadifard and L. Storasta and Chen, {W. M.} and Jihyun Kim and F. Ren and G. Thaler and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Zavada, {J. M.}",

note = "Funding Information: The work at Linkoping University was partially supported by the Swedish Research Council. The work at the University of Florida was partially supported by the U.S. Army Research Office under Grant Nos. DAAG55-98-1-0216 and DAAD 190210420 and by the National Science Foundation under Grant Nos. DMR 0101438 and ECS-02242203. The work at the National Central University was partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06-1-4) and the National Science Council of the Republic of China (Grant No. NSC89-2215-E-008-031).",

year = "2004",

month = may,

doi = "10.1007/s11664-004-0204-9",

language = "English",

volume = "33",

pages = "467--471",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

AU - Buyanova, I. A.

AU - Izadifard, M.

AU - Storasta, L.

AU - Chen, W. M.

AU - Kim, Jihyun

AU - Ren, F.

AU - Thaler, G.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Zavada, J. M.

N1 - Funding Information: The work at Linkoping University was partially supported by the Swedish Research Council. The work at the University of Florida was partially supported by the U.S. Army Research Office under Grant Nos. DAAG55-98-1-0216 and DAAD 190210420 and by the National Science Foundation under Grant Nos. DMR 0101438 and ECS-02242203. The work at the National Central University was partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06-1-4) and the National Science Council of the Republic of China (Grant No. NSC89-2215-E-008-031).

PY - 2004/5

Y1 - 2004/5

N2 - (Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

AB - (Ga,Mn)N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

KW - (Ga,Mn)N/InGaN

KW - Light-emitting diode (LED)

KW - Molecular beam epitaxy (MBE)

KW - Multiquantum well (MQW)

UR - http://www.scopus.com/inward/record.url?scp=2442675717&partnerID=8YFLogxK

U2 - 10.1007/s11664-004-0204-9

DO - 10.1007/s11664-004-0204-9

M3 - Article

AN - SCOPUS:2442675717

SN - 0361-5235

VL - 33

SP - 467

EP - 471

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

Abstract

Keywords

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