Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

Ji Hyuk Choi, Jungwoo Kim, Soong Ju Oh, Daekyoung Kim, Yong Hoon Kim, Heeyeop Chae, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

Original languageEnglish
Pages (from-to)723-729
Number of pages7
JournalMetals and Materials International
Issue number4
Publication statusPublished - 2016 Jul 1


  • electrical/electronic materials, nanostructured materials, chemical synthesis, doping, surface passivation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry


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