Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al₂O₃

Keyphrases

• Aluminum Oxide 100%
• Ambient Stability 33%
• Atomic Layer Deposited 100%
• Atomic Layer Deposition 33%
• Atomic Layer Deposition Al2O3 66%
• Charge Transport 66%
• Colloidal Semiconductor Nanocrystals 33%
• Deposition Methods 33%
• Doping Level 33%
• Doping Mechanism 33%
• Effective Strategies 33%
• Electrical Analysis 33%
• Electrical Properties 100%
• Excess Carriers 33%
• Field-effect Transistors 33%
• Free Carriers 33%
• Infill 33%
• Microstructural Analysis 33%
• Nanocrystal Films 66%
• Nanocrystal Thin Films 100%
• Nanocrystals 33%
• Number of Cycles 33%
• Optical Properties 100%
• Optimal number 33%
• Optimal Performance 33%
• Passivated 100%
• Passivation 33%
• Remote Doping 33%
• Simple Strategy 33%
• Spectroscopic Analysis 33%
• Surface Defects 33%
• Surface Trap States 33%
• Surface-to-volume Ratio 33%
• Ultrathin 33%
• ZnO Nanocrystals 100%

Engineering

• Atomic Layer 100%
• Atomic Layer Deposition 100%
• Based Optoelectronic Device 33%
• Charge Transport 66%
• Doping Level 33%
• Excess Carrier 33%
• Field-Effect Transistor 33%
• Optimal Performance 33%
• Passivation 33%
• Surface Defect 33%
• Thin Films 100%
• Volume Ratio 33%

Material Science

• Al2O3 100%
• Field Effect Transistor 20%
• Film 40%
• Nanocrystalline Material 100%
• Optical Property 100%
• Surface Defect 20%
• Thin Films 100%
• ZnO 100%