Optical and field emission properties of thin single-crystalline GaN nanowires

Byeongchul Ha, Sung Ho Seo, Jung Hee Cho, Chong S. Yoon, Jinkyoung Yoo, Gyu Chul Yi, Chong Yun Park, Cheol Jin Lee

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100 Citations (Scopus)


Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/μm and the current density was about 0.2 mA/cm2 at 17.5 V/μm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.

Original languageEnglish
Pages (from-to)11095-11099
Number of pages5
JournalJournal of Physical Chemistry B
Issue number22
Publication statusPublished - 2005 Jun 9
Externally publishedYes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry


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